PROGRAMMING OF MEMORY CELLS IN THREE-DIMENSIONAL MEMORY DEVICES

Embodiments of 3D memory devices and methods for operating the 3D memory devices are disclosed. In an example, a 3D memory device includes a NAND memory string and a peripheral circuit. The NAND memory string extends vertically above a substrate and includes a plurality of memory cells arranged vert...

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Hauptverfasser:	Liu, Hongtao, Wang, Ming, Xu, Yongyan, Jin, Lei, Huo, Zongliang
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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creator	Liu, Hongtao Wang, Ming Xu, Yongyan Jin, Lei Huo, Zongliang
description	Embodiments of 3D memory devices and methods for operating the 3D memory devices are disclosed. In an example, a 3D memory device includes a NAND memory string and a peripheral circuit. The NAND memory string extends vertically above a substrate and includes a plurality of memory cells arranged vertically in series. The peripheral circuit is configured to program the memory cells based on incremental step pulse programming (ISPP). Different verification voltages of the ISPP are applied to at least two of the memory cells.
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subjects	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
title	PROGRAMMING OF MEMORY CELLS IN THREE-DIMENSIONAL MEMORY DEVICES
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