WAVELENGTH-VARIABLE LASER
A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned...
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| creator | IRINO, Satoshi FUNABASHI, Masaki YOSHIDA, Junji IRIE, Yuichiro SAWAMURA, Taketsugu TANAKA, Nobumasa ITOH, Hirokazu |
| description | A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020067279A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020067279A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020067279A13</originalsourceid><addsrcrecordid>eNrjZJAMdwxz9XH1cw_x0A1zDPJ0dPJxVfBxDHYN4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGBgZm5kbmlo6GxsSpAgCY2yD5</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>WAVELENGTH-VARIABLE LASER</title><source>esp@cenet</source><creator>IRINO, Satoshi ; FUNABASHI, Masaki ; YOSHIDA, Junji ; IRIE, Yuichiro ; SAWAMURA, Taketsugu ; TANAKA, Nobumasa ; ITOH, Hirokazu</creator><creatorcontrib>IRINO, Satoshi ; FUNABASHI, Masaki ; YOSHIDA, Junji ; IRIE, Yuichiro ; SAWAMURA, Taketsugu ; TANAKA, Nobumasa ; ITOH, Hirokazu</creatorcontrib><description>A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200227&DB=EPODOC&CC=US&NR=2020067279A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200227&DB=EPODOC&CC=US&NR=2020067279A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IRINO, Satoshi</creatorcontrib><creatorcontrib>FUNABASHI, Masaki</creatorcontrib><creatorcontrib>YOSHIDA, Junji</creatorcontrib><creatorcontrib>IRIE, Yuichiro</creatorcontrib><creatorcontrib>SAWAMURA, Taketsugu</creatorcontrib><creatorcontrib>TANAKA, Nobumasa</creatorcontrib><creatorcontrib>ITOH, Hirokazu</creatorcontrib><title>WAVELENGTH-VARIABLE LASER</title><description>A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAMdwxz9XH1cw_x0A1zDPJ0dPJxVfBxDHYN4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGBgZm5kbmlo6GxsSpAgCY2yD5</recordid><startdate>20200227</startdate><enddate>20200227</enddate><creator>IRINO, Satoshi</creator><creator>FUNABASHI, Masaki</creator><creator>YOSHIDA, Junji</creator><creator>IRIE, Yuichiro</creator><creator>SAWAMURA, Taketsugu</creator><creator>TANAKA, Nobumasa</creator><creator>ITOH, Hirokazu</creator><scope>EVB</scope></search><sort><creationdate>20200227</creationdate><title>WAVELENGTH-VARIABLE LASER</title><author>IRINO, Satoshi ; FUNABASHI, Masaki ; YOSHIDA, Junji ; IRIE, Yuichiro ; SAWAMURA, Taketsugu ; TANAKA, Nobumasa ; ITOH, Hirokazu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020067279A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>IRINO, Satoshi</creatorcontrib><creatorcontrib>FUNABASHI, Masaki</creatorcontrib><creatorcontrib>YOSHIDA, Junji</creatorcontrib><creatorcontrib>IRIE, Yuichiro</creatorcontrib><creatorcontrib>SAWAMURA, Taketsugu</creatorcontrib><creatorcontrib>TANAKA, Nobumasa</creatorcontrib><creatorcontrib>ITOH, Hirokazu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IRINO, Satoshi</au><au>FUNABASHI, Masaki</au><au>YOSHIDA, Junji</au><au>IRIE, Yuichiro</au><au>SAWAMURA, Taketsugu</au><au>TANAKA, Nobumasa</au><au>ITOH, Hirokazu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>WAVELENGTH-VARIABLE LASER</title><date>2020-02-27</date><risdate>2020</risdate><abstract>A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | WAVELENGTH-VARIABLE LASER |
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