SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
Disclosed are semiconductor devices and methods of manufacturing the same. The method includes providing a semiconductor substrate, forming a redistribution line on a top surface of the semiconductor substrate, and forming a passivation layer to cover the redistribution line on the top surface of th...
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creator | FUJISAKI, Atsushi CHOI, Ju-ll JEONG, Teahwa JIN, Jeonggi |
description | Disclosed are semiconductor devices and methods of manufacturing the same. The method includes providing a semiconductor substrate, forming a redistribution line on a top surface of the semiconductor substrate, and forming a passivation layer to cover the redistribution line on the top surface of the semiconductor substrate. The forming a redistribution line includes a first stage of forming a first segment of the redistribution line on the top surface of the semiconductor substrate, and a second stage of forming a second segment of the redistribution line on the first segment of the redistribution line. An average grain size of the second segment of the redistribution line is less than an average grain size of the first segment of the redistribution line. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020058609A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020058609A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020058609A13</originalsourceid><addsrcrecordid>eNrjZLAOdvX1dPb3cwl1DvEPUnBxDfN0dg1WcPRzUfB1DfHwdwlW8HdT8HX0C3VzdA4JDfL0c1cI8XBVCHb0deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRgYGphZmBpaOhsbEqQIAgowqLw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME</title><source>esp@cenet</source><creator>FUJISAKI, Atsushi ; CHOI, Ju-ll ; JEONG, Teahwa ; JIN, Jeonggi</creator><creatorcontrib>FUJISAKI, Atsushi ; CHOI, Ju-ll ; JEONG, Teahwa ; JIN, Jeonggi</creatorcontrib><description>Disclosed are semiconductor devices and methods of manufacturing the same. The method includes providing a semiconductor substrate, forming a redistribution line on a top surface of the semiconductor substrate, and forming a passivation layer to cover the redistribution line on the top surface of the semiconductor substrate. The forming a redistribution line includes a first stage of forming a first segment of the redistribution line on the top surface of the semiconductor substrate, and a second stage of forming a second segment of the redistribution line on the first segment of the redistribution line. An average grain size of the second segment of the redistribution line is less than an average grain size of the first segment of the redistribution line.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200220&DB=EPODOC&CC=US&NR=2020058609A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200220&DB=EPODOC&CC=US&NR=2020058609A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUJISAKI, Atsushi</creatorcontrib><creatorcontrib>CHOI, Ju-ll</creatorcontrib><creatorcontrib>JEONG, Teahwa</creatorcontrib><creatorcontrib>JIN, Jeonggi</creatorcontrib><title>SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME</title><description>Disclosed are semiconductor devices and methods of manufacturing the same. The method includes providing a semiconductor substrate, forming a redistribution line on a top surface of the semiconductor substrate, and forming a passivation layer to cover the redistribution line on the top surface of the semiconductor substrate. The forming a redistribution line includes a first stage of forming a first segment of the redistribution line on the top surface of the semiconductor substrate, and a second stage of forming a second segment of the redistribution line on the first segment of the redistribution line. An average grain size of the second segment of the redistribution line is less than an average grain size of the first segment of the redistribution line.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAOdvX1dPb3cwl1DvEPUnBxDfN0dg1WcPRzUfB1DfHwdwlW8HdT8HX0C3VzdA4JDfL0c1cI8XBVCHb0deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRgYGphZmBpaOhsbEqQIAgowqLw</recordid><startdate>20200220</startdate><enddate>20200220</enddate><creator>FUJISAKI, Atsushi</creator><creator>CHOI, Ju-ll</creator><creator>JEONG, Teahwa</creator><creator>JIN, Jeonggi</creator><scope>EVB</scope></search><sort><creationdate>20200220</creationdate><title>SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME</title><author>FUJISAKI, Atsushi ; CHOI, Ju-ll ; JEONG, Teahwa ; JIN, Jeonggi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020058609A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>FUJISAKI, Atsushi</creatorcontrib><creatorcontrib>CHOI, Ju-ll</creatorcontrib><creatorcontrib>JEONG, Teahwa</creatorcontrib><creatorcontrib>JIN, Jeonggi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUJISAKI, Atsushi</au><au>CHOI, Ju-ll</au><au>JEONG, Teahwa</au><au>JIN, Jeonggi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME</title><date>2020-02-20</date><risdate>2020</risdate><abstract>Disclosed are semiconductor devices and methods of manufacturing the same. The method includes providing a semiconductor substrate, forming a redistribution line on a top surface of the semiconductor substrate, and forming a passivation layer to cover the redistribution line on the top surface of the semiconductor substrate. The forming a redistribution line includes a first stage of forming a first segment of the redistribution line on the top surface of the semiconductor substrate, and a second stage of forming a second segment of the redistribution line on the first segment of the redistribution line. An average grain size of the second segment of the redistribution line is less than an average grain size of the first segment of the redistribution line.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME |
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