SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

A metal-oxide-semiconductor field-effect transistor (MOSFET) with integrated passive structures and methods of manufacturing the same is disclosed. The method includes forming a stacked structure in an active region and at least one shallow trench isolation (STI) structure adjacent to the stacked st...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Mo, Renee T, Kumar, Arvind, Narasimha, Shreesh, Chou, Anthony I
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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