THERMAL ANALYSIS OF SEMICONDUCTOR DEVICES
A method for determining a thermal impedance of a sample device is described. According to the method, a sample device is heated to an initial temperature. A pulsed power including a sequence of pulses is applied to the sample device. Temperature of the sample device is measured in a time-dependent...
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| creator | SCHMID, Maximilian HANSS, Alexander ELGER, Gordon |
| description | A method for determining a thermal impedance of a sample device is described. According to the method, a sample device is heated to an initial temperature. A pulsed power including a sequence of pulses is applied to the sample device. Temperature of the sample device is measured in a time-dependent manner. A thermal impedance of the sample device is determined based on the temperature of the sample device and the pulsed power. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020018711A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020018711A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020018711A13</originalsourceid><addsrcrecordid>eNrjZNAM8XAN8nX0UXD0c_SJDPYMVvB3Uwh29fV09vdzCXUO8Q9ScHEN83R2DeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRgYGhhbmhoaOhsbEqQIAyQslWA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>THERMAL ANALYSIS OF SEMICONDUCTOR DEVICES</title><source>esp@cenet</source><creator>SCHMID, Maximilian ; HANSS, Alexander ; ELGER, Gordon</creator><creatorcontrib>SCHMID, Maximilian ; HANSS, Alexander ; ELGER, Gordon</creatorcontrib><description>A method for determining a thermal impedance of a sample device is described. According to the method, a sample device is heated to an initial temperature. A pulsed power including a sequence of pulses is applied to the sample device. Temperature of the sample device is measured in a time-dependent manner. A thermal impedance of the sample device is determined based on the temperature of the sample device and the pulsed power.</description><language>eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; MEASURING QUANTITY OF HEAT ; MEASURING TEMPERATURE ; PHYSICS ; TESTING ; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200116&DB=EPODOC&CC=US&NR=2020018711A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200116&DB=EPODOC&CC=US&NR=2020018711A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SCHMID, Maximilian</creatorcontrib><creatorcontrib>HANSS, Alexander</creatorcontrib><creatorcontrib>ELGER, Gordon</creatorcontrib><title>THERMAL ANALYSIS OF SEMICONDUCTOR DEVICES</title><description>A method for determining a thermal impedance of a sample device is described. According to the method, a sample device is heated to an initial temperature. A pulsed power including a sequence of pulses is applied to the sample device. Temperature of the sample device is measured in a time-dependent manner. A thermal impedance of the sample device is determined based on the temperature of the sample device and the pulsed power.</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>MEASURING QUANTITY OF HEAT</subject><subject>MEASURING TEMPERATURE</subject><subject>PHYSICS</subject><subject>TESTING</subject><subject>THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAM8XAN8nX0UXD0c_SJDPYMVvB3Uwh29fV09vdzCXUO8Q9ScHEN83R2DeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRgYGhhbmhoaOhsbEqQIAyQslWA</recordid><startdate>20200116</startdate><enddate>20200116</enddate><creator>SCHMID, Maximilian</creator><creator>HANSS, Alexander</creator><creator>ELGER, Gordon</creator><scope>EVB</scope></search><sort><creationdate>20200116</creationdate><title>THERMAL ANALYSIS OF SEMICONDUCTOR DEVICES</title><author>SCHMID, Maximilian ; HANSS, Alexander ; ELGER, Gordon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020018711A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>MEASURING QUANTITY OF HEAT</topic><topic>MEASURING TEMPERATURE</topic><topic>PHYSICS</topic><topic>TESTING</topic><topic>THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR</topic><toplevel>online_resources</toplevel><creatorcontrib>SCHMID, Maximilian</creatorcontrib><creatorcontrib>HANSS, Alexander</creatorcontrib><creatorcontrib>ELGER, Gordon</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SCHMID, Maximilian</au><au>HANSS, Alexander</au><au>ELGER, Gordon</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THERMAL ANALYSIS OF SEMICONDUCTOR DEVICES</title><date>2020-01-16</date><risdate>2020</risdate><abstract>A method for determining a thermal impedance of a sample device is described. According to the method, a sample device is heated to an initial temperature. A pulsed power including a sequence of pulses is applied to the sample device. Temperature of the sample device is measured in a time-dependent manner. A thermal impedance of the sample device is determined based on the temperature of the sample device and the pulsed power.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES MEASURING QUANTITY OF HEAT MEASURING TEMPERATURE PHYSICS TESTING THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR |
| title | THERMAL ANALYSIS OF SEMICONDUCTOR DEVICES |
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