CAPACITOR, SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE CAPACITOR AND THE SEMICONDUCTOR DEVICE

A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric mat...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHO, Kyuho, SEO, Jong-Bom, JEON, Joohyun, KIM, Suhwan, KANG, Sangyeol, PARK, Young-Lim, MOON, Sunmin
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CHO, Kyuho
SEO, Jong-Bom
JEON, Joohyun
KIM, Suhwan
KANG, Sangyeol
PARK, Young-Lim
MOON, Sunmin
description A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020013853A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020013853A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020013853A13</originalsourceid><addsrcrecordid>eNrjZEh3dgxwdPYM8Q_SUQh29fV09vdzCXUGchVcXMM8nV0VHP1cFHxdQzz8XYIV_N0UfB39Qt0cnUNCgzz93BVCPFwV4AaAlYJEsJnDw8CalphTnMoLpbkZlN1cQ5w9dFML8uNTiwsSk1PzUkviQ4ONDIwMDAyNLUyNHQ2NiVMFAKgKNg0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CAPACITOR, SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE CAPACITOR AND THE SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>CHO, Kyuho ; SEO, Jong-Bom ; JEON, Joohyun ; KIM, Suhwan ; KANG, Sangyeol ; PARK, Young-Lim ; MOON, Sunmin</creator><creatorcontrib>CHO, Kyuho ; SEO, Jong-Bom ; JEON, Joohyun ; KIM, Suhwan ; KANG, Sangyeol ; PARK, Young-Lim ; MOON, Sunmin</creatorcontrib><description>A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200109&amp;DB=EPODOC&amp;CC=US&amp;NR=2020013853A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200109&amp;DB=EPODOC&amp;CC=US&amp;NR=2020013853A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHO, Kyuho</creatorcontrib><creatorcontrib>SEO, Jong-Bom</creatorcontrib><creatorcontrib>JEON, Joohyun</creatorcontrib><creatorcontrib>KIM, Suhwan</creatorcontrib><creatorcontrib>KANG, Sangyeol</creatorcontrib><creatorcontrib>PARK, Young-Lim</creatorcontrib><creatorcontrib>MOON, Sunmin</creatorcontrib><title>CAPACITOR, SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE CAPACITOR AND THE SEMICONDUCTOR DEVICE</title><description>A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEh3dgxwdPYM8Q_SUQh29fV09vdzCXUGchVcXMM8nV0VHP1cFHxdQzz8XYIV_N0UfB39Qt0cnUNCgzz93BVCPFwV4AaAlYJEsJnDw8CalphTnMoLpbkZlN1cQ5w9dFML8uNTiwsSk1PzUkviQ4ONDIwMDAyNLUyNHQ2NiVMFAKgKNg0</recordid><startdate>20200109</startdate><enddate>20200109</enddate><creator>CHO, Kyuho</creator><creator>SEO, Jong-Bom</creator><creator>JEON, Joohyun</creator><creator>KIM, Suhwan</creator><creator>KANG, Sangyeol</creator><creator>PARK, Young-Lim</creator><creator>MOON, Sunmin</creator><scope>EVB</scope></search><sort><creationdate>20200109</creationdate><title>CAPACITOR, SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE CAPACITOR AND THE SEMICONDUCTOR DEVICE</title><author>CHO, Kyuho ; SEO, Jong-Bom ; JEON, Joohyun ; KIM, Suhwan ; KANG, Sangyeol ; PARK, Young-Lim ; MOON, Sunmin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020013853A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHO, Kyuho</creatorcontrib><creatorcontrib>SEO, Jong-Bom</creatorcontrib><creatorcontrib>JEON, Joohyun</creatorcontrib><creatorcontrib>KIM, Suhwan</creatorcontrib><creatorcontrib>KANG, Sangyeol</creatorcontrib><creatorcontrib>PARK, Young-Lim</creatorcontrib><creatorcontrib>MOON, Sunmin</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHO, Kyuho</au><au>SEO, Jong-Bom</au><au>JEON, Joohyun</au><au>KIM, Suhwan</au><au>KANG, Sangyeol</au><au>PARK, Young-Lim</au><au>MOON, Sunmin</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CAPACITOR, SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE CAPACITOR AND THE SEMICONDUCTOR DEVICE</title><date>2020-01-09</date><risdate>2020</risdate><abstract>A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2020013853A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title CAPACITOR, SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE CAPACITOR AND THE SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T00%3A02%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHO,%20Kyuho&rft.date=2020-01-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020013853A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true