CAPACITOR, SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE CAPACITOR AND THE SEMICONDUCTOR DEVICE

A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric mat...

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Bibliographische Detailangaben
Hauptverfasser: CHO, Kyuho, SEO, Jong-Bom, JEON, Joohyun, KIM, Suhwan, KANG, Sangyeol, PARK, Young-Lim, MOON, Sunmin
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.