METHODS AND APPARATUS FOR IMAGE SENSOR SEMICONDUCTORS

Methods and apparatus form an image sensor pixel circuit on flexible and non-flexible substrates. At least one indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) is formed at a process temperature of approximately 400 degrees Celsius or less and at least one photodiode is formed on at least...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	RAMASWAMI, SESHADRI, LI, PHILIP HSIN-HUA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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