METHODS AND APPARATUS FOR IMAGE SENSOR SEMICONDUCTORS

METHODS AND APPARATUS FOR IMAGE SENSOR SEMICONDUCTORS

Methods and apparatus form an image sensor pixel circuit on flexible and non-flexible substrates. At least one indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) is formed at a process temperature of approximately 400 degrees Celsius or less and at least one photodiode is formed on at least...

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Hauptverfasser: RAMASWAMI, SESHADRI, LI, PHILIP HSIN-HUA
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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LI, PHILIP HSIN-HUA
description Methods and apparatus form an image sensor pixel circuit on flexible and non-flexible substrates. At least one indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) is formed at a process temperature of approximately 400 degrees Celsius or less and at least one photodiode is formed on at least one of the at least one IGZO TFT. The at least one photodiode having an absorption layer formed, at least in part, by depositing a copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70% at a process temperature of less than or equal to approximately 400 degrees Celsius and doping the CIGS material with antimony at a process temperature of less than or equal to approximately 400 degrees Celsius.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2020006412A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2020006412A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2020006412A13</originalsourceid><addsrcrecordid>eNrjZDD1dQ3x8HcJVnD0c1FwDAhwDHIMCQ1WcPMPUvD0dXR3VQh29QsGcoJdfT2d_f1cQp1D_IOCeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRgYGBmYmhkaOhMXGqAJUkKKA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHODS AND APPARATUS FOR IMAGE SENSOR SEMICONDUCTORS</title><source>esp@cenet</source><creator>RAMASWAMI, SESHADRI ; LI, PHILIP HSIN-HUA</creator><creatorcontrib>RAMASWAMI, SESHADRI ; LI, PHILIP HSIN-HUA</creatorcontrib><description>Methods and apparatus form an image sensor pixel circuit on flexible and non-flexible substrates. At least one indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) is formed at a process temperature of approximately 400 degrees Celsius or less and at least one photodiode is formed on at least one of the at least one IGZO TFT. The at least one photodiode having an absorption layer formed, at least in part, by depositing a copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70% at a process temperature of less than or equal to approximately 400 degrees Celsius and doping the CIGS material with antimony at a process temperature of less than or equal to approximately 400 degrees Celsius.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200102&amp;DB=EPODOC&amp;CC=US&amp;NR=2020006412A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200102&amp;DB=EPODOC&amp;CC=US&amp;NR=2020006412A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RAMASWAMI, SESHADRI</creatorcontrib><creatorcontrib>LI, PHILIP HSIN-HUA</creatorcontrib><title>METHODS AND APPARATUS FOR IMAGE SENSOR SEMICONDUCTORS</title><description>Methods and apparatus form an image sensor pixel circuit on flexible and non-flexible substrates. At least one indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) is formed at a process temperature of approximately 400 degrees Celsius or less and at least one photodiode is formed on at least one of the at least one IGZO TFT. The at least one photodiode having an absorption layer formed, at least in part, by depositing a copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70% at a process temperature of less than or equal to approximately 400 degrees Celsius and doping the CIGS material with antimony at a process temperature of less than or equal to approximately 400 degrees Celsius.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1dQ3x8HcJVnD0c1FwDAhwDHIMCQ1WcPMPUvD0dXR3VQh29QsGcoJdfT2d_f1cQp1D_IOCeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRgYGBmYmhkaOhMXGqAJUkKKA</recordid><startdate>20200102</startdate><enddate>20200102</enddate><creator>RAMASWAMI, SESHADRI</creator><creator>LI, PHILIP HSIN-HUA</creator><scope>EVB</scope></search><sort><creationdate>20200102</creationdate><title>METHODS AND APPARATUS FOR IMAGE SENSOR SEMICONDUCTORS</title><author>RAMASWAMI, SESHADRI ; LI, PHILIP HSIN-HUA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2020006412A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RAMASWAMI, SESHADRI</creatorcontrib><creatorcontrib>LI, PHILIP HSIN-HUA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RAMASWAMI, SESHADRI</au><au>LI, PHILIP HSIN-HUA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHODS AND APPARATUS FOR IMAGE SENSOR SEMICONDUCTORS</title><date>2020-01-02</date><risdate>2020</risdate><abstract>Methods and apparatus form an image sensor pixel circuit on flexible and non-flexible substrates. At least one indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) is formed at a process temperature of approximately 400 degrees Celsius or less and at least one photodiode is formed on at least one of the at least one IGZO TFT. The at least one photodiode having an absorption layer formed, at least in part, by depositing a copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70% at a process temperature of less than or equal to approximately 400 degrees Celsius and doping the CIGS material with antimony at a process temperature of less than or equal to approximately 400 degrees Celsius.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHODS AND APPARATUS FOR IMAGE SENSOR SEMICONDUCTORS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T22%3A46%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RAMASWAMI,%20SESHADRI&rft.date=2020-01-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2020006412A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true