METHOD AND STRUCTURE TO PROVIDE INTEGRATED LONG CHANNEL VERTICAL FINFET DEVICE

A vertical fin field effect transistor includes a semiconductor fin disposed over a well region and a gate conductor layer disposed over a sidewall of the fin, and extending laterally over a top surface of the well region adjacent to the fin. The extension of the gate conductor over the bottom sourc...

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Bibliographische Detailangaben

Hauptverfasser:	WU, Xusheng, BRUNCO, David Paul
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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