THIN FILM ETCHANT COMPOSITION AND METHOD OF FORMING METAL PATTERN BY USING THE SAME
A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of...
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| creator | Nam, Giyong Lee, Byungsu Lim, Daesung Jang, Sanghoon Kim, Changsoo Kim, Haccheol Chung, Joohwan Shim, Kyungbo Kim, Jinsook Kim, Dongki Kim, Jinhyung Jung, Jungseek Park, Youngchul Kim, Sangtae |
| description | A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition. |
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The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191205&DB=EPODOC&CC=US&NR=2019368053A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191205&DB=EPODOC&CC=US&NR=2019368053A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nam, Giyong</creatorcontrib><creatorcontrib>Lee, Byungsu</creatorcontrib><creatorcontrib>Lim, Daesung</creatorcontrib><creatorcontrib>Jang, Sanghoon</creatorcontrib><creatorcontrib>Kim, Changsoo</creatorcontrib><creatorcontrib>Kim, Haccheol</creatorcontrib><creatorcontrib>Chung, Joohwan</creatorcontrib><creatorcontrib>Shim, Kyungbo</creatorcontrib><creatorcontrib>Kim, Jinsook</creatorcontrib><creatorcontrib>Kim, Dongki</creatorcontrib><creatorcontrib>Kim, Jinhyung</creatorcontrib><creatorcontrib>Jung, Jungseek</creatorcontrib><creatorcontrib>Park, Youngchul</creatorcontrib><creatorcontrib>Kim, Sangtae</creatorcontrib><title>THIN FILM ETCHANT COMPOSITION AND METHOD OF FORMING METAL PATTERN BY USING THE SAME</title><description>A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwjAQQLM4iPoPB85Ca1B0PNvEBJq70lwHp1IkTqKF-v9IwA9wevB4vKWK4jyB9U0AI5VDEqg4tBy9eCZAqiEYcVwDW7DcBU_XbLCBFkVMR3C5QR-zFmcgYjBrtXiMzzltflyprc3zXZreQ5qn8Z5e6TP0cV-UZ308FQeNpf6v-gKZBzCC</recordid><startdate>20191205</startdate><enddate>20191205</enddate><creator>Nam, Giyong</creator><creator>Lee, Byungsu</creator><creator>Lim, Daesung</creator><creator>Jang, Sanghoon</creator><creator>Kim, Changsoo</creator><creator>Kim, Haccheol</creator><creator>Chung, Joohwan</creator><creator>Shim, Kyungbo</creator><creator>Kim, Jinsook</creator><creator>Kim, Dongki</creator><creator>Kim, Jinhyung</creator><creator>Jung, Jungseek</creator><creator>Park, Youngchul</creator><creator>Kim, Sangtae</creator><scope>EVB</scope></search><sort><creationdate>20191205</creationdate><title>THIN FILM ETCHANT COMPOSITION AND METHOD OF FORMING METAL PATTERN BY USING THE SAME</title><author>Nam, Giyong ; 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The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | THIN FILM ETCHANT COMPOSITION AND METHOD OF FORMING METAL PATTERN BY USING THE SAME |
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