TECHNIQUES AND APPARATUS FOR ELONGATION PATTERNING USING ANGLED ION BEAMS

TECHNIQUES AND APPARATUS FOR ELONGATION PATTERNING USING ANGLED ION BEAMS

A method of patterning a substrate may include providing a cavity in a layer, disposed on the substrate. The cavity may have a first length along a first direction and a first width along a second direction, perpendicular to the first direction. The method may include directing first angled ions in...

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Hauptverfasser: Anglin, Kevin R, Ruffell, Simon
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Anglin, Kevin R
Ruffell, Simon
description A method of patterning a substrate may include providing a cavity in a layer, disposed on the substrate. The cavity may have a first length along a first direction and a first width along a second direction, perpendicular to the first direction. The method may include directing first angled ions in a first exposure to the cavity, wherein after the first exposure the cavity has a second length, greater than the first length; directing normal ions in a second exposure to the cavity, wherein the cavity retains the second length after the second exposure; and directing second angled ions to the cavity is a third exposure, subsequent to the second exposure, wherein the cavity has a third length, greater than the second length, after the third exposure.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title TECHNIQUES AND APPARATUS FOR ELONGATION PATTERNING USING ANGLED ION BEAMS
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