NON-CONTACT ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES

Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floatin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Wang, Hongmei, Kamana, Rajesh, Hill, Ervin T, Majumdar, Amitava, Hug, Marlon W, Lyonsmith, Shawn D, Liu, Zengtao T
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Wang, Hongmei
Kamana, Rajesh
Hill, Ervin T
Majumdar, Amitava
Hug, Marlon W
Lyonsmith, Shawn D
Liu, Zengtao T
description Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019355418A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019355418A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019355418A13</originalsourceid><addsrcrecordid>eNqNyrEKwjAQANAsDlL9hwPngrEWdEyvpy3Ui71c5lIknUQL9f9x8QOc3vLWBtlzjp7VoQJ1hCqeoSJ3g7v4quUrKGHDbR8pgOMahDqnVENQiahRKGzMahqfS9r-zMzuQopNnub3kJZ5fKRX-gwxHPb2XJTl0Z6cLf5bX-nFLKE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NON-CONTACT ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES</title><source>esp@cenet</source><creator>Wang, Hongmei ; Kamana, Rajesh ; Hill, Ervin T ; Majumdar, Amitava ; Hug, Marlon W ; Lyonsmith, Shawn D ; Liu, Zengtao T</creator><creatorcontrib>Wang, Hongmei ; Kamana, Rajesh ; Hill, Ervin T ; Majumdar, Amitava ; Hug, Marlon W ; Lyonsmith, Shawn D ; Liu, Zengtao T</creatorcontrib><description>Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191121&amp;DB=EPODOC&amp;CC=US&amp;NR=2019355418A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191121&amp;DB=EPODOC&amp;CC=US&amp;NR=2019355418A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wang, Hongmei</creatorcontrib><creatorcontrib>Kamana, Rajesh</creatorcontrib><creatorcontrib>Hill, Ervin T</creatorcontrib><creatorcontrib>Majumdar, Amitava</creatorcontrib><creatorcontrib>Hug, Marlon W</creatorcontrib><creatorcontrib>Lyonsmith, Shawn D</creatorcontrib><creatorcontrib>Liu, Zengtao T</creatorcontrib><title>NON-CONTACT ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES</title><description>Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAsDlL9hwPngrEWdEyvpy3Ui71c5lIknUQL9f9x8QOc3vLWBtlzjp7VoQJ1hCqeoSJ3g7v4quUrKGHDbR8pgOMahDqnVENQiahRKGzMahqfS9r-zMzuQopNnub3kJZ5fKRX-gwxHPb2XJTl0Z6cLf5bX-nFLKE</recordid><startdate>20191121</startdate><enddate>20191121</enddate><creator>Wang, Hongmei</creator><creator>Kamana, Rajesh</creator><creator>Hill, Ervin T</creator><creator>Majumdar, Amitava</creator><creator>Hug, Marlon W</creator><creator>Lyonsmith, Shawn D</creator><creator>Liu, Zengtao T</creator><scope>EVB</scope></search><sort><creationdate>20191121</creationdate><title>NON-CONTACT ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES</title><author>Wang, Hongmei ; Kamana, Rajesh ; Hill, Ervin T ; Majumdar, Amitava ; Hug, Marlon W ; Lyonsmith, Shawn D ; Liu, Zengtao T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019355418A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang, Hongmei</creatorcontrib><creatorcontrib>Kamana, Rajesh</creatorcontrib><creatorcontrib>Hill, Ervin T</creatorcontrib><creatorcontrib>Majumdar, Amitava</creatorcontrib><creatorcontrib>Hug, Marlon W</creatorcontrib><creatorcontrib>Lyonsmith, Shawn D</creatorcontrib><creatorcontrib>Liu, Zengtao T</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Hongmei</au><au>Kamana, Rajesh</au><au>Hill, Ervin T</au><au>Majumdar, Amitava</au><au>Hug, Marlon W</au><au>Lyonsmith, Shawn D</au><au>Liu, Zengtao T</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NON-CONTACT ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES</title><date>2019-11-21</date><risdate>2019</risdate><abstract>Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2019355418A1
source esp@cenet
subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title NON-CONTACT ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T12%3A44%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Wang,%20Hongmei&rft.date=2019-11-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019355418A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true