NON-CONTACT MEASUREMENT OF MEMORY CELL THRESHOLD VOLTAGE

Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wang, Hongmei, Kamana, Rajesh, Hill, Ervin T, Majumdar, Amitava, Hug, Marlon W, Lyonsmith, Shawn D, Liu, Zengtao T
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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