IMAGE SENSOR WITH BOOSTED PHOTODIODES FOR TIME OF FLIGHT MEASUREMENTS

An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an elec...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Mabuchi, Keiji, Manabe, Sohei
Format: Patent
Sprache:eng
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