IMAGE SENSOR WITH BOOSTED PHOTODIODES FOR TIME OF FLIGHT MEASUREMENTS
An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an elec...
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| creator | Mabuchi, Keiji Manabe, Sohei |
| description | An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal. |
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The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.</description><language>eng</language><subject>ANALOGOUS ARRANGEMENTS USING OTHER WAVES ; BASIC ELECTRIC ELEMENTS ; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES ; MEASURING ; PHYSICS ; PICTORIAL COMMUNICATION, e.g. TELEVISION ; RADIO DIRECTION-FINDING ; RADIO NAVIGATION ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191107&DB=EPODOC&CC=US&NR=2019339392A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191107&DB=EPODOC&CC=US&NR=2019339392A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mabuchi, Keiji</creatorcontrib><creatorcontrib>Manabe, Sohei</creatorcontrib><title>IMAGE SENSOR WITH BOOSTED PHOTODIODES FOR TIME OF FLIGHT MEASUREMENTS</title><description>An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. 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The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ANALOGOUS ARRANGEMENTS USING OTHER WAVES BASIC ELECTRIC ELEMENTS DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES MEASURING PHYSICS PICTORIAL COMMUNICATION, e.g. TELEVISION RADIO DIRECTION-FINDING RADIO NAVIGATION SEMICONDUCTOR DEVICES TESTING |
| title | IMAGE SENSOR WITH BOOSTED PHOTODIODES FOR TIME OF FLIGHT MEASUREMENTS |
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