MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

A memory device includes a first stacked structure including a plurality of first conductive layers extending in a first direction and arrayed along a second direction intersecting with the first direction, a second stacked structure provided on the first stacked structure and including a plurality...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	MOROOKA, Tetsu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!