HIGH-VOLTAGE TRANSISTOR DEVICES WITH TWO-STEP FIELD PLATE STRUCTURES

High-voltage transistor devices with two-step field plate structures and methods of fabricating the transistor devices are provided. An example high voltage transistor device includes: a gate electrode disposed over a substrate between a source region and a drain region, a first film laterally exten...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lin, Wei-Chih, Wang, Han-Lun, Lin, An-Hung, Chen, Xin-You, Huang, Bo-Jui
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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