NONVOLATILE MEMORY DEVICE
A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degrada...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | BYEON, Dae Seok BANG, Jin Bae LEE, Han Jun SONG, Seung Hwan PARK, II Han CHOI, Na Young YOON, Hyun Jun |
| description | A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019287629A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019287629A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019287629A13</originalsourceid><addsrcrecordid>eNrjZJD08_cL8_dxDPH0cVXwdfX1D4pUcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGlkYW5mZGlo6GxsSpAgCkVCEk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NONVOLATILE MEMORY DEVICE</title><source>esp@cenet</source><creator>BYEON, Dae Seok ; BANG, Jin Bae ; LEE, Han Jun ; SONG, Seung Hwan ; PARK, II Han ; CHOI, Na Young ; YOON, Hyun Jun</creator><creatorcontrib>BYEON, Dae Seok ; BANG, Jin Bae ; LEE, Han Jun ; SONG, Seung Hwan ; PARK, II Han ; CHOI, Na Young ; YOON, Hyun Jun</creatorcontrib><description>A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190919&DB=EPODOC&CC=US&NR=2019287629A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190919&DB=EPODOC&CC=US&NR=2019287629A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BYEON, Dae Seok</creatorcontrib><creatorcontrib>BANG, Jin Bae</creatorcontrib><creatorcontrib>LEE, Han Jun</creatorcontrib><creatorcontrib>SONG, Seung Hwan</creatorcontrib><creatorcontrib>PARK, II Han</creatorcontrib><creatorcontrib>CHOI, Na Young</creatorcontrib><creatorcontrib>YOON, Hyun Jun</creatorcontrib><title>NONVOLATILE MEMORY DEVICE</title><description>A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD08_cL8_dxDPH0cVXwdfX1D4pUcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGlkYW5mZGlo6GxsSpAgCkVCEk</recordid><startdate>20190919</startdate><enddate>20190919</enddate><creator>BYEON, Dae Seok</creator><creator>BANG, Jin Bae</creator><creator>LEE, Han Jun</creator><creator>SONG, Seung Hwan</creator><creator>PARK, II Han</creator><creator>CHOI, Na Young</creator><creator>YOON, Hyun Jun</creator><scope>EVB</scope></search><sort><creationdate>20190919</creationdate><title>NONVOLATILE MEMORY DEVICE</title><author>BYEON, Dae Seok ; BANG, Jin Bae ; LEE, Han Jun ; SONG, Seung Hwan ; PARK, II Han ; CHOI, Na Young ; YOON, Hyun Jun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019287629A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>BYEON, Dae Seok</creatorcontrib><creatorcontrib>BANG, Jin Bae</creatorcontrib><creatorcontrib>LEE, Han Jun</creatorcontrib><creatorcontrib>SONG, Seung Hwan</creatorcontrib><creatorcontrib>PARK, II Han</creatorcontrib><creatorcontrib>CHOI, Na Young</creatorcontrib><creatorcontrib>YOON, Hyun Jun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BYEON, Dae Seok</au><au>BANG, Jin Bae</au><au>LEE, Han Jun</au><au>SONG, Seung Hwan</au><au>PARK, II Han</au><au>CHOI, Na Young</au><au>YOON, Hyun Jun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NONVOLATILE MEMORY DEVICE</title><date>2019-09-19</date><risdate>2019</risdate><abstract>A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2019287629A1 |
| source | esp@cenet |
| subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES |
| title | NONVOLATILE MEMORY DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T11%3A41%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BYEON,%20Dae%20Seok&rft.date=2019-09-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019287629A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |