FILM FORMATION APPARATUS AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
A film forming apparatus includes a reaction chamber, a pedestal disposed inside the reaction chamber and configured to support a substrate, and a gas shower head over the pedestal. The gas shower head includes a plurality of first holes and a plurality of second hole disposed between a circumferenc...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TSAI, CHENG-YUAN HUANG, CHIH-HUI CHOU, CHENG-HSIEN LI, SHENGAN |
| description | A film forming apparatus includes a reaction chamber, a pedestal disposed inside the reaction chamber and configured to support a substrate, and a gas shower head over the pedestal. The gas shower head includes a plurality of first holes and a plurality of second hole disposed between a circumference of the gas shower head and the first holes. The first holes are arranged to form a first pattern and configured to form a first portion of a material film on the substrate. The second holes are arranged to form a second pattern and configured to form a second portion of the material film on the substrate. A hole density of the second pattern is greater than a hole density of the second pattern. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019284695A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019284695A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019284695A13</originalsourceid><addsrcrecordid>eNrjZHB38_TxVXDzD_J1DPH091NwDAhwDHIMCQ1WcPRzUfB1DfHwdwFJg5V4-rkrBLv6ejr7-7mEOocARYNDgoCM0CBXHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oSHxpsZGBoaWRhYmZp6mhoTJwqALapLgM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FILM FORMATION APPARATUS AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE</title><source>esp@cenet</source><creator>TSAI, CHENG-YUAN ; HUANG, CHIH-HUI ; CHOU, CHENG-HSIEN ; LI, SHENGAN</creator><creatorcontrib>TSAI, CHENG-YUAN ; HUANG, CHIH-HUI ; CHOU, CHENG-HSIEN ; LI, SHENGAN</creatorcontrib><description>A film forming apparatus includes a reaction chamber, a pedestal disposed inside the reaction chamber and configured to support a substrate, and a gas shower head over the pedestal. The gas shower head includes a plurality of first holes and a plurality of second hole disposed between a circumference of the gas shower head and the first holes. The first holes are arranged to form a first pattern and configured to form a first portion of a material film on the substrate. The second holes are arranged to form a second pattern and configured to form a second portion of the material film on the substrate. A hole density of the second pattern is greater than a hole density of the second pattern.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190919&DB=EPODOC&CC=US&NR=2019284695A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190919&DB=EPODOC&CC=US&NR=2019284695A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TSAI, CHENG-YUAN</creatorcontrib><creatorcontrib>HUANG, CHIH-HUI</creatorcontrib><creatorcontrib>CHOU, CHENG-HSIEN</creatorcontrib><creatorcontrib>LI, SHENGAN</creatorcontrib><title>FILM FORMATION APPARATUS AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE</title><description>A film forming apparatus includes a reaction chamber, a pedestal disposed inside the reaction chamber and configured to support a substrate, and a gas shower head over the pedestal. The gas shower head includes a plurality of first holes and a plurality of second hole disposed between a circumference of the gas shower head and the first holes. The first holes are arranged to form a first pattern and configured to form a first portion of a material film on the substrate. The second holes are arranged to form a second pattern and configured to form a second portion of the material film on the substrate. A hole density of the second pattern is greater than a hole density of the second pattern.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB38_TxVXDzD_J1DPH091NwDAhwDHIMCQ1WcPRzUfB1DfHwdwFJg5V4-rkrBLv6ejr7-7mEOocARYNDgoCM0CBXHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oSHxpsZGBoaWRhYmZp6mhoTJwqALapLgM</recordid><startdate>20190919</startdate><enddate>20190919</enddate><creator>TSAI, CHENG-YUAN</creator><creator>HUANG, CHIH-HUI</creator><creator>CHOU, CHENG-HSIEN</creator><creator>LI, SHENGAN</creator><scope>EVB</scope></search><sort><creationdate>20190919</creationdate><title>FILM FORMATION APPARATUS AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE</title><author>TSAI, CHENG-YUAN ; HUANG, CHIH-HUI ; CHOU, CHENG-HSIEN ; LI, SHENGAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019284695A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>TSAI, CHENG-YUAN</creatorcontrib><creatorcontrib>HUANG, CHIH-HUI</creatorcontrib><creatorcontrib>CHOU, CHENG-HSIEN</creatorcontrib><creatorcontrib>LI, SHENGAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TSAI, CHENG-YUAN</au><au>HUANG, CHIH-HUI</au><au>CHOU, CHENG-HSIEN</au><au>LI, SHENGAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FILM FORMATION APPARATUS AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE</title><date>2019-09-19</date><risdate>2019</risdate><abstract>A film forming apparatus includes a reaction chamber, a pedestal disposed inside the reaction chamber and configured to support a substrate, and a gas shower head over the pedestal. The gas shower head includes a plurality of first holes and a plurality of second hole disposed between a circumference of the gas shower head and the first holes. The first holes are arranged to form a first pattern and configured to form a first portion of a material film on the substrate. The second holes are arranged to form a second pattern and configured to form a second portion of the material film on the substrate. A hole density of the second pattern is greater than a hole density of the second pattern.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2019284695A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | FILM FORMATION APPARATUS AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T07%3A22%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TSAI,%20CHENG-YUAN&rft.date=2019-09-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019284695A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |