SEMICONDUCTOR DEVICE INCLUDING ENHANCED CONTACT STRUCTURES HAVING A SUPERLATTICE
A semiconductor device may include a semiconductor substrate having a trench therein, and a superlattice liner at least partially covering bottom and sidewall portions of the trench. The superlattice liner may include a plurality of stacked groups of layers, with each group of layers including a plu...
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| creator | CONNELLY, DANIEL CODY, NYLES WYNN CHOUTOV, DMITRI BURTON, RICHARD MEARS, ROBERT J TRAUTMANN, ERWIN STEPHENSON, ROBERT JOHN |
| description | A semiconductor device may include a semiconductor substrate having a trench therein, and a superlattice liner at least partially covering bottom and sidewall portions of the trench. The superlattice liner may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include a semiconductor cap layer on the superlattice liner and having a dopant constrained therein by the superlattice liner, and a conductive body within the trench. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE INCLUDING ENHANCED CONTACT STRUCTURES HAVING A SUPERLATTICE |
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