WIDE CONTACT STRUCTURE FOR SMALL FOOTPRINT RADIO FREQUENCY (RF) SWITCH

WIDE CONTACT STRUCTURE FOR SMALL FOOTPRINT RADIO FREQUENCY (RF) SWITCH

A structure includes channel regions located between source/drain regions, and a polysilicon gate structure including a plurality of gate fingers, each extending over a corresponding channel region. Each gate finger includes first and second rectangular portions extending in parallel with a first ax...

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Hauptverfasser: Kanawati, Roda, Hurwitz, Paul D
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Kanawati, Roda
Hurwitz, Paul D
description A structure includes channel regions located between source/drain regions, and a polysilicon gate structure including a plurality of gate fingers, each extending over a corresponding channel region. Each gate finger includes first and second rectangular portions extending in parallel with a first axis, and a connector portion that introduces an offset between the first and second rectangular portions along a second axis. This offset causes each source/drain region to have a first section with a first length along the second axis, and a second section with a second length along the second axis, greater than the first length. A single column of contacts having a first width along the second axis is provided in the first section of each source/drain region, and a single column of contacts having a second width along the second axis, greater than the first width, is provided in the second section of each source/drain region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title WIDE CONTACT STRUCTURE FOR SMALL FOOTPRINT RADIO FREQUENCY (RF) SWITCH
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