POWER TRANSISTOR WITH TERMINAL TRENCHES IN TERMINAL RESURF REGIONS

A device includes a transistor formed on a substrate. The transistor includes an n-type drain contact layer, an n-type drain layer, an oxide layer, a p-type body region, a p-type terminal region, body trenches, and terminal trenches. The n-type drain contact layer is near a bottom surface of the sub...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Suzuki, Satoshi, Molloy, Simon John, Sridhar, Seetharaman, Kocon, Christopher Boguslaw, Kawahara, Hideaki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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