SEMICONDUCTOR MEMORY DEVICE MANAGING FLEXIBLE REFRESH SKIP AREA
A semiconductor memory device having a flexible refresh skip area includes a memory cell array including a plurality of rows to store data, a row decoder connected to the memory cell array, a refresh area storage unit to store a beginning address and an end address of a memory area that is to be ref...
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creator | Kang, Uksong Chung, Hoiju |
description | A semiconductor memory device having a flexible refresh skip area includes a memory cell array including a plurality of rows to store data, a row decoder connected to the memory cell array, a refresh area storage unit to store a beginning address and an end address of a memory area that is to be refreshed in which the memory area that is to be refreshed does not include a refresh skip area having a size is selectively and/or adaptively changed, and a refresh control circuit connected to the row decoder and the refresh area storage unit. The refresh control circuit controls a refresh operation for the area that is to be refreshed and not for the refresh skip area. |
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The refresh control circuit controls a refresh operation for the area that is to be refreshed and not for the refresh skip area.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190808&DB=EPODOC&CC=US&NR=2019244657A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190808&DB=EPODOC&CC=US&NR=2019244657A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kang, Uksong</creatorcontrib><creatorcontrib>Chung, Hoiju</creatorcontrib><title>SEMICONDUCTOR MEMORY DEVICE MANAGING FLEXIBLE REFRESH SKIP AREA</title><description>A semiconductor memory device having a flexible refresh skip area includes a memory cell array including a plurality of rows to store data, a row decoder connected to the memory cell array, a refresh area storage unit to store a beginning address and an end address of a memory area that is to be refreshed in which the memory area that is to be refreshed does not include a refresh skip area having a size is selectively and/or adaptively changed, and a refresh control circuit connected to the row decoder and the refresh area storage unit. The refresh control circuit controls a refresh operation for the area that is to be refreshed and not for the refresh skip area.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAPdvX1dPb3cwl1DvEPUvB19fUPilRwcQ3zdHZV8HX0c3T39HNXcPNxjfB08nFVCHJ1C3IN9lAI9vYMUHAMcnXkYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoaWRiYmZqbmjobGxKkCADUpK14</recordid><startdate>20190808</startdate><enddate>20190808</enddate><creator>Kang, Uksong</creator><creator>Chung, Hoiju</creator><scope>EVB</scope></search><sort><creationdate>20190808</creationdate><title>SEMICONDUCTOR MEMORY DEVICE MANAGING FLEXIBLE REFRESH SKIP AREA</title><author>Kang, Uksong ; Chung, Hoiju</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019244657A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kang, Uksong</creatorcontrib><creatorcontrib>Chung, Hoiju</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kang, Uksong</au><au>Chung, Hoiju</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR MEMORY DEVICE MANAGING FLEXIBLE REFRESH SKIP AREA</title><date>2019-08-08</date><risdate>2019</risdate><abstract>A semiconductor memory device having a flexible refresh skip area includes a memory cell array including a plurality of rows to store data, a row decoder connected to the memory cell array, a refresh area storage unit to store a beginning address and an end address of a memory area that is to be refreshed in which the memory area that is to be refreshed does not include a refresh skip area having a size is selectively and/or adaptively changed, and a refresh control circuit connected to the row decoder and the refresh area storage unit. 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subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | SEMICONDUCTOR MEMORY DEVICE MANAGING FLEXIBLE REFRESH SKIP AREA |
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