MIDDLE OF LINE STRUCTURES

The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and/or drain metallization features; spacers on sidewalls of the gate structu...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZANG, Hui, TABAKMAN, Keith, XU, Guowei, SARDESAI, Viraj
Format: Patent
Sprache:eng
Schlagworte:
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