SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

In a vertical power MOSFET having a superjunction structure, the withstand voltage of the power MOSFET can be ensured even if the aspect ratios of an n-type column region and a p-type column region are increased so as to vary the impurity concentration of the p-type column region. P-type semiconduct...

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Bibliographische Detailangaben

Hauptverfasser:	EGUCHI, Satoshi, ABIKO, Yuya, YAMAGUCHI, Natsuo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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