METHOD FOR MEASURING PROXIMITY EFFECT ON HIGH DENSITY MAGNETIC TUNNEL JUNCTION DEVICES IN A MAGNETIC RANDOM ACCESS MEMORY DEVICE
A method for testing individual memory elements or sets of memory elements of an array of magnetic memory elements. The method involves forming a mask such as photoresist mask over an array memory elements. The mask is configured with an opening over each of the selected memory elements to be tested...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Boone, Thomas D Manandhar, Pradeep |
| description | A method for testing individual memory elements or sets of memory elements of an array of magnetic memory elements. The method involves forming a mask such as photoresist mask over an array memory elements. The mask is configured with an opening over each of the selected memory elements to be tested. The mask can be formed of photoresist which can be patterned by focused electron beam exposure to form opening at features sizes smaller than those available using standard photolithographic processes. An electrically conductive material is deposited over the mask and into the openings in the mask to make electrical contact with the selected memory element or memory elements to be tested. Then, electrical connection can be made with the electrically conductive material to test the selected one or more magnetic memory elements. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019206749A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019206749A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019206749A13</originalsourceid><addsrcrecordid>eNqNzb0KwjAUBeAuDqK-wwVnoa2idAzJTRMxN5IfsVMpEifRQn0AH90KgqvTgXM-ONPsZTAoK0BaBwaZj05TDUdnz9ro0ABKiTyAJVC6ViCQ_Kc2rCYMmkOIRHiAfSQe9KgEnjRHD5qA_ZRjJKwBxsfJjz_GuuZL59nk2t2GtPjmLFtKDFytUv9o09B3l3RPzzb6Mi-qMt_uNhUr1v-pN1djPQQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR MEASURING PROXIMITY EFFECT ON HIGH DENSITY MAGNETIC TUNNEL JUNCTION DEVICES IN A MAGNETIC RANDOM ACCESS MEMORY DEVICE</title><source>esp@cenet</source><creator>Boone, Thomas D ; Manandhar, Pradeep</creator><creatorcontrib>Boone, Thomas D ; Manandhar, Pradeep</creatorcontrib><description>A method for testing individual memory elements or sets of memory elements of an array of magnetic memory elements. The method involves forming a mask such as photoresist mask over an array memory elements. The mask is configured with an opening over each of the selected memory elements to be tested. The mask can be formed of photoresist which can be patterned by focused electron beam exposure to form opening at features sizes smaller than those available using standard photolithographic processes. An electrically conductive material is deposited over the mask and into the openings in the mask to make electrical contact with the selected memory element or memory elements to be tested. Then, electrical connection can be made with the electrically conductive material to test the selected one or more magnetic memory elements.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INDUCTANCES ; INFORMATION STORAGE ; MAGNETS ; PHYSICS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; SEMICONDUCTOR DEVICES ; STATIC STORES ; TRANSFORMERS</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190704&DB=EPODOC&CC=US&NR=2019206749A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190704&DB=EPODOC&CC=US&NR=2019206749A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Boone, Thomas D</creatorcontrib><creatorcontrib>Manandhar, Pradeep</creatorcontrib><title>METHOD FOR MEASURING PROXIMITY EFFECT ON HIGH DENSITY MAGNETIC TUNNEL JUNCTION DEVICES IN A MAGNETIC RANDOM ACCESS MEMORY DEVICE</title><description>A method for testing individual memory elements or sets of memory elements of an array of magnetic memory elements. The method involves forming a mask such as photoresist mask over an array memory elements. The mask is configured with an opening over each of the selected memory elements to be tested. The mask can be formed of photoresist which can be patterned by focused electron beam exposure to form opening at features sizes smaller than those available using standard photolithographic processes. An electrically conductive material is deposited over the mask and into the openings in the mask to make electrical contact with the selected memory element or memory elements to be tested. Then, electrical connection can be made with the electrically conductive material to test the selected one or more magnetic memory elements.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INFORMATION STORAGE</subject><subject>MAGNETS</subject><subject>PHYSICS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzb0KwjAUBeAuDqK-wwVnoa2idAzJTRMxN5IfsVMpEifRQn0AH90KgqvTgXM-ONPsZTAoK0BaBwaZj05TDUdnz9ro0ABKiTyAJVC6ViCQ_Kc2rCYMmkOIRHiAfSQe9KgEnjRHD5qA_ZRjJKwBxsfJjz_GuuZL59nk2t2GtPjmLFtKDFytUv9o09B3l3RPzzb6Mi-qMt_uNhUr1v-pN1djPQQ</recordid><startdate>20190704</startdate><enddate>20190704</enddate><creator>Boone, Thomas D</creator><creator>Manandhar, Pradeep</creator><scope>EVB</scope></search><sort><creationdate>20190704</creationdate><title>METHOD FOR MEASURING PROXIMITY EFFECT ON HIGH DENSITY MAGNETIC TUNNEL JUNCTION DEVICES IN A MAGNETIC RANDOM ACCESS MEMORY DEVICE</title><author>Boone, Thomas D ; Manandhar, Pradeep</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019206749A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INFORMATION STORAGE</topic><topic>MAGNETS</topic><topic>PHYSICS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>Boone, Thomas D</creatorcontrib><creatorcontrib>Manandhar, Pradeep</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Boone, Thomas D</au><au>Manandhar, Pradeep</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MEASURING PROXIMITY EFFECT ON HIGH DENSITY MAGNETIC TUNNEL JUNCTION DEVICES IN A MAGNETIC RANDOM ACCESS MEMORY DEVICE</title><date>2019-07-04</date><risdate>2019</risdate><abstract>A method for testing individual memory elements or sets of memory elements of an array of magnetic memory elements. The method involves forming a mask such as photoresist mask over an array memory elements. The mask is configured with an opening over each of the selected memory elements to be tested. The mask can be formed of photoresist which can be patterned by focused electron beam exposure to form opening at features sizes smaller than those available using standard photolithographic processes. An electrically conductive material is deposited over the mask and into the openings in the mask to make electrical contact with the selected memory element or memory elements to be tested. Then, electrical connection can be made with the electrically conductive material to test the selected one or more magnetic memory elements.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2019206749A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TRANSFORMERS |
| title | METHOD FOR MEASURING PROXIMITY EFFECT ON HIGH DENSITY MAGNETIC TUNNEL JUNCTION DEVICES IN A MAGNETIC RANDOM ACCESS MEMORY DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T04%3A20%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Boone,%20Thomas%20D&rft.date=2019-07-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019206749A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |