METHODS FOR FABRICATING ARTIFICIAL NEURAL NETWORKS (ANN) BASED ON DOPED SEMICONDUCTOR ELEMENTS

A method of forming a resistive random access memory (RRAM) element, the method includes forming a Silicon layer on an oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the thin film dopant layer.

Bibliographische Detailangaben

Hauptverfasser:	COPEL, Matthew Warren, HANNON, James Bowler, OIDA, Satoshi, AFZALI-ARDAKANI, Ali
Format:	Patent
Sprache:	eng
Schlagworte:	CALCULATING COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING COUNTING ELECTRICITY PHYSICS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!