METHODS FOR FABRICATING ARTIFICIAL NEURAL NETWORKS (ANN) BASED ON DOPED SEMICONDUCTOR ELEMENTS

METHODS FOR FABRICATING ARTIFICIAL NEURAL NETWORKS (ANN) BASED ON DOPED SEMICONDUCTOR ELEMENTS

A method of forming a resistive random access memory (RRAM) element, the method includes forming a Silicon layer on an oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the thin film dopant layer.

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Bibliographische Detailangaben
Hauptverfasser: COPEL, Matthew Warren, HANNON, James Bowler, OIDA, Satoshi, AFZALI-ARDAKANI, Ali
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRICITY
PHYSICS
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Beschreibung
Zusammenfassung:A method of forming a resistive random access memory (RRAM) element, the method includes forming a Silicon layer on an oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the thin film dopant layer.