LATERAL INSULATED-GATE BIPOLAR TRANSISTOR AND METHOD THEREFOR

A transistor includes a substrate of a first conductivity type. An epitaxial layer of the first conductivity type is formed at a top surface of the substrate. A first region of the first conductivity type is formed as a well in the epitaxial layer. A second region of a second conductivity type is fo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Dragon, Christopher Paul, Wright, Walter Sherrard, Gao, Zihao M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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