SENSE AMPLIFIER WITH NEGATIVE THRESHOLD SENSING FOR NON-VOLATILE MEMORY

A sense amplifier for a memory circuit that can sense into the deep negative voltage threshold region is described. A selected memory cell is sensed by discharging a source line through the memory cell into the bit line and sense amplifier. While discharging the source line through the memory cell i...

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Bibliographische Detailangaben

Hauptverfasser:	Nguyen, Hao, Lee, Seungpil
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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