DECODING METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT

A decoding method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the invention. The method includes: reading at least one memory cells by using at least one read voltage level to obtain a codeword; performing a parity...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lai, Kuo-Hsin, Yen, Shao-Wei, Lin, Yu-Hsiang, Yang, Cheng-Che
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Lai, Kuo-Hsin
Yen, Shao-Wei
Lin, Yu-Hsiang
Yang, Cheng-Che
description A decoding method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the invention. The method includes: reading at least one memory cells by using at least one read voltage level to obtain a codeword; performing a parity check operation on the codeword by an error checking and correcting circuit to generate a syndrome sum corresponding to the codeword; and dynamically adjusting a first parameter used by the error checking and correcting circuit in a first decoding operation based on whether the syndrome sum is less than a first threshold value and performing the first decoding operation on the codeword by the error checking and correcting circuit by using the first parameter.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019163567A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019163567A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019163567A13</originalsourceid><addsrcrecordid>eNrjZHBzcXX2d_H0c1fwdQ3x8HfRAdK-_kGRCsEh_kGO7q4KLq5hns6uCo5-LjAZZ3-_kCB_HwVnzyDnUM8QhVA_zxAeBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhIfGmxkYGhpaGZsambuaGhMnCoAUMgtOQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DECODING METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT</title><source>esp@cenet</source><creator>Lai, Kuo-Hsin ; Yen, Shao-Wei ; Lin, Yu-Hsiang ; Yang, Cheng-Che</creator><creatorcontrib>Lai, Kuo-Hsin ; Yen, Shao-Wei ; Lin, Yu-Hsiang ; Yang, Cheng-Che</creatorcontrib><description>A decoding method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the invention. The method includes: reading at least one memory cells by using at least one read voltage level to obtain a codeword; performing a parity check operation on the codeword by an error checking and correcting circuit to generate a syndrome sum corresponding to the codeword; and dynamically adjusting a first parameter used by the error checking and correcting circuit in a first decoding operation based on whether the syndrome sum is less than a first threshold value and performing the first decoding operation on the codeword by the error checking and correcting circuit by using the first parameter.</description><language>eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; CALCULATING ; CODE CONVERSION IN GENERAL ; CODING ; COMPUTING ; COUNTING ; DECODING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190530&amp;DB=EPODOC&amp;CC=US&amp;NR=2019163567A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190530&amp;DB=EPODOC&amp;CC=US&amp;NR=2019163567A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lai, Kuo-Hsin</creatorcontrib><creatorcontrib>Yen, Shao-Wei</creatorcontrib><creatorcontrib>Lin, Yu-Hsiang</creatorcontrib><creatorcontrib>Yang, Cheng-Che</creatorcontrib><title>DECODING METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT</title><description>A decoding method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the invention. The method includes: reading at least one memory cells by using at least one read voltage level to obtain a codeword; performing a parity check operation on the codeword by an error checking and correcting circuit to generate a syndrome sum corresponding to the codeword; and dynamically adjusting a first parameter used by the error checking and correcting circuit in a first decoding operation based on whether the syndrome sum is less than a first threshold value and performing the first decoding operation on the codeword by the error checking and correcting circuit by using the first parameter.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>CALCULATING</subject><subject>CODE CONVERSION IN GENERAL</subject><subject>CODING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>DECODING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBzcXX2d_H0c1fwdQ3x8HfRAdK-_kGRCsEh_kGO7q4KLq5hns6uCo5-LjAZZ3-_kCB_HwVnzyDnUM8QhVA_zxAeBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhIfGmxkYGhpaGZsambuaGhMnCoAUMgtOQ</recordid><startdate>20190530</startdate><enddate>20190530</enddate><creator>Lai, Kuo-Hsin</creator><creator>Yen, Shao-Wei</creator><creator>Lin, Yu-Hsiang</creator><creator>Yang, Cheng-Che</creator><scope>EVB</scope></search><sort><creationdate>20190530</creationdate><title>DECODING METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT</title><author>Lai, Kuo-Hsin ; Yen, Shao-Wei ; Lin, Yu-Hsiang ; Yang, Cheng-Che</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019163567A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>CALCULATING</topic><topic>CODE CONVERSION IN GENERAL</topic><topic>CODING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>DECODING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Lai, Kuo-Hsin</creatorcontrib><creatorcontrib>Yen, Shao-Wei</creatorcontrib><creatorcontrib>Lin, Yu-Hsiang</creatorcontrib><creatorcontrib>Yang, Cheng-Che</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lai, Kuo-Hsin</au><au>Yen, Shao-Wei</au><au>Lin, Yu-Hsiang</au><au>Yang, Cheng-Che</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DECODING METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT</title><date>2019-05-30</date><risdate>2019</risdate><abstract>A decoding method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the invention. The method includes: reading at least one memory cells by using at least one read voltage level to obtain a codeword; performing a parity check operation on the codeword by an error checking and correcting circuit to generate a syndrome sum corresponding to the codeword; and dynamically adjusting a first parameter used by the error checking and correcting circuit in a first decoding operation based on whether the syndrome sum is less than a first threshold value and performing the first decoding operation on the codeword by the error checking and correcting circuit by using the first parameter.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2019163567A1
source esp@cenet
subjects BASIC ELECTRONIC CIRCUITRY
CALCULATING
CODE CONVERSION IN GENERAL
CODING
COMPUTING
COUNTING
DECODING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title DECODING METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T18%3A38%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Lai,%20Kuo-Hsin&rft.date=2019-05-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019163567A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true