MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Provided is a memory device including a substrate, a stack layer, a channel structure, a charge storage structure, a silicon nitride layer, and a buffer oxide layer. The stack layer is disposed over the substrate. The stack layer includes a plurality of dielectric layers and a plurality of conductiv...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jhang, Pei-Ci, Lu, Chi-Pin
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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