METHOD FOR MONITORING GAS IN WAFER PROCESSING SYSTEM

A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HSIEH, Wen-Chieh, CHUNG, Chia-Hung, CHEN, Chun-Yu, WU, Yong-Ting, YEH, Su-Yu, KAO, Ko-Bin, WU, Li-Jen, CHEN, Hung-Ming
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HSIEH, Wen-Chieh
CHUNG, Chia-Hung
CHEN, Chun-Yu
WU, Yong-Ting
YEH, Su-Yu
KAO, Ko-Bin
WU, Li-Jen
CHEN, Hung-Ming
description A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019157124A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019157124A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019157124A13</originalsourceid><addsrcrecordid>eNrjZDDxdQ3x8HdRcPMPUvD19_MM8Q_y9HNXcHcMVvD0Uwh3dHMNUggI8nd2DQ4GiQdHBoe4-vIwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDQ0tDU3NDIxNHQ2PiVAEAawgoZg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR MONITORING GAS IN WAFER PROCESSING SYSTEM</title><source>esp@cenet</source><creator>HSIEH, Wen-Chieh ; CHUNG, Chia-Hung ; CHEN, Chun-Yu ; WU, Yong-Ting ; YEH, Su-Yu ; KAO, Ko-Bin ; WU, Li-Jen ; CHEN, Hung-Ming</creator><creatorcontrib>HSIEH, Wen-Chieh ; CHUNG, Chia-Hung ; CHEN, Chun-Yu ; WU, Yong-Ting ; YEH, Su-Yu ; KAO, Ko-Bin ; WU, Li-Jen ; CHEN, Hung-Ming</creatorcontrib><description>A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190523&amp;DB=EPODOC&amp;CC=US&amp;NR=2019157124A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190523&amp;DB=EPODOC&amp;CC=US&amp;NR=2019157124A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HSIEH, Wen-Chieh</creatorcontrib><creatorcontrib>CHUNG, Chia-Hung</creatorcontrib><creatorcontrib>CHEN, Chun-Yu</creatorcontrib><creatorcontrib>WU, Yong-Ting</creatorcontrib><creatorcontrib>YEH, Su-Yu</creatorcontrib><creatorcontrib>KAO, Ko-Bin</creatorcontrib><creatorcontrib>WU, Li-Jen</creatorcontrib><creatorcontrib>CHEN, Hung-Ming</creatorcontrib><title>METHOD FOR MONITORING GAS IN WAFER PROCESSING SYSTEM</title><description>A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDxdQ3x8HdRcPMPUvD19_MM8Q_y9HNXcHcMVvD0Uwh3dHMNUggI8nd2DQ4GiQdHBoe4-vIwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDQ0tDU3NDIxNHQ2PiVAEAawgoZg</recordid><startdate>20190523</startdate><enddate>20190523</enddate><creator>HSIEH, Wen-Chieh</creator><creator>CHUNG, Chia-Hung</creator><creator>CHEN, Chun-Yu</creator><creator>WU, Yong-Ting</creator><creator>YEH, Su-Yu</creator><creator>KAO, Ko-Bin</creator><creator>WU, Li-Jen</creator><creator>CHEN, Hung-Ming</creator><scope>EVB</scope></search><sort><creationdate>20190523</creationdate><title>METHOD FOR MONITORING GAS IN WAFER PROCESSING SYSTEM</title><author>HSIEH, Wen-Chieh ; CHUNG, Chia-Hung ; CHEN, Chun-Yu ; WU, Yong-Ting ; YEH, Su-Yu ; KAO, Ko-Bin ; WU, Li-Jen ; CHEN, Hung-Ming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019157124A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>HSIEH, Wen-Chieh</creatorcontrib><creatorcontrib>CHUNG, Chia-Hung</creatorcontrib><creatorcontrib>CHEN, Chun-Yu</creatorcontrib><creatorcontrib>WU, Yong-Ting</creatorcontrib><creatorcontrib>YEH, Su-Yu</creatorcontrib><creatorcontrib>KAO, Ko-Bin</creatorcontrib><creatorcontrib>WU, Li-Jen</creatorcontrib><creatorcontrib>CHEN, Hung-Ming</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HSIEH, Wen-Chieh</au><au>CHUNG, Chia-Hung</au><au>CHEN, Chun-Yu</au><au>WU, Yong-Ting</au><au>YEH, Su-Yu</au><au>KAO, Ko-Bin</au><au>WU, Li-Jen</au><au>CHEN, Hung-Ming</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MONITORING GAS IN WAFER PROCESSING SYSTEM</title><date>2019-05-23</date><risdate>2019</risdate><abstract>A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2019157124A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title METHOD FOR MONITORING GAS IN WAFER PROCESSING SYSTEM
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T06%3A56%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HSIEH,%20Wen-Chieh&rft.date=2019-05-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019157124A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true