Method Of Forming Pairs Of Three-Gate Non-volatile Flash Memory Cells Using Two Polysilicon Deposition Steps

A simplified method for forming pairs of non-volatile memory cells using two polysilicon depositions. A first polysilicon layer is formed on and insulated from the semiconductor substrate in a first polysilicon deposition process. A pair of spaced apart insulation blocks are formed on the first poly...

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Bibliographische Detailangaben

Hauptverfasser:	Su, Chieng-Sheng, Wang, Chunming, Liu, Xian, Zhou, Feng, Do, Nhan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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