SEMICONDUCTOR DEVICE AND METHOD OF UNIT SPECIFIC PROGRESSIVE ALIGNMENT

A semiconductor device may include a semiconductor die disposed within an encapsulant, the semiconductor die being misaligned with a package edge formed by the encapsulant. A total radial shift of the semiconductor die may account for the misalignment between semiconductor die and the package edge. A build-up interconnect structure may comprise two or more layers formed over the semiconductor die and the encapsulant, the two or more layers comprising at least one redistribution layer (RDL). The total radial shift may be distributed over the two or more layers of the build-up interconnect structure to form a unit specific pattern for each of the two or more layers. An average misalignment of the semiconductor die and the package edge may be greater than the average misalignment of the at least one unit specific pattern with respect to the package edge.