HARD-MASK COMPOSITION

Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain compatible with other solvents used in the semiconductor industry.

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Bibliographische Detailangaben
Hauptverfasser: Robinson, Alex P. G, Lada, Thomas, Dawson, Guy, Jackson, Edward, Roth, John, Brown, Allan G
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain compatible with other solvents used in the semiconductor industry.