THIN FILM TRANSISTOR ELEMENT SUBSTRATE, METHOD OF PRODUCING THE SUBSTRATE, AND ORGANIC EL DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ELEMENT SUBSTRATE

THIN FILM TRANSISTOR ELEMENT SUBSTRATE, METHOD OF PRODUCING THE SUBSTRATE, AND ORGANIC EL DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ELEMENT SUBSTRATE

The thin film transistor element substrate of the present disclosure includes a first moisture barrier layer covering the gate insulating layer and the gate electrode, covering the contact regions of the oxide semiconductor layer other than the connecting portion of the contact region connected to t...

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1. Verfasser: KANEGAE, Arinobu
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KANEGAE, Arinobu
description The thin film transistor element substrate of the present disclosure includes a first moisture barrier layer covering the gate insulating layer and the gate electrode, covering the contact regions of the oxide semiconductor layer other than the connecting portion of the contact region connected to the source electrode and the connecting portion of the contact region connected to the drain electrode, and covering an surface of the substrate on which the oxide semiconductor layer is not disposed. The first moisture barrier layer includes a metal oxide and is formed by atomic layer deposition. The first moisture barrier layer formed by atomic layer deposition is in contact with a pair of contact regions.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019123300A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019123300A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019123300A13</originalsourceid><addsrcrecordid>eNqNjT8LwjAUxLs4iPodHrgq9M_kGJPX5kGaSPIiOJUicRIt1K_jd7WDgmOng7vf3S2zN2uyUJNpgb2wgQI7D2iwRcsQ4jFMNuMOWmTtFLgaTt6pKMk2wBr_EWGn3DfCkpwWQFE4GXEBhWeSCGSliepXm3e7zha3_j6mzVdX2bZGlnqfhmeXxqG_pkd6dTGUeXEoyqrKc1FU86gPzVlFGg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>THIN FILM TRANSISTOR ELEMENT SUBSTRATE, METHOD OF PRODUCING THE SUBSTRATE, AND ORGANIC EL DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ELEMENT SUBSTRATE</title><source>esp@cenet</source><creator>KANEGAE, Arinobu</creator><creatorcontrib>KANEGAE, Arinobu</creatorcontrib><description>The thin film transistor element substrate of the present disclosure includes a first moisture barrier layer covering the gate insulating layer and the gate electrode, covering the contact regions of the oxide semiconductor layer other than the connecting portion of the contact region connected to the source electrode and the connecting portion of the contact region connected to the drain electrode, and covering an surface of the substrate on which the oxide semiconductor layer is not disposed. The first moisture barrier layer includes a metal oxide and is formed by atomic layer deposition. The first moisture barrier layer formed by atomic layer deposition is in contact with a pair of contact regions.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC HEATING ; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190425&amp;DB=EPODOC&amp;CC=US&amp;NR=2019123300A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190425&amp;DB=EPODOC&amp;CC=US&amp;NR=2019123300A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KANEGAE, Arinobu</creatorcontrib><title>THIN FILM TRANSISTOR ELEMENT SUBSTRATE, METHOD OF PRODUCING THE SUBSTRATE, AND ORGANIC EL DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ELEMENT SUBSTRATE</title><description>The thin film transistor element substrate of the present disclosure includes a first moisture barrier layer covering the gate insulating layer and the gate electrode, covering the contact regions of the oxide semiconductor layer other than the connecting portion of the contact region connected to the source electrode and the connecting portion of the contact region connected to the drain electrode, and covering an surface of the substrate on which the oxide semiconductor layer is not disposed. The first moisture barrier layer includes a metal oxide and is formed by atomic layer deposition. The first moisture barrier layer formed by atomic layer deposition is in contact with a pair of contact regions.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC HEATING</subject><subject>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjT8LwjAUxLs4iPodHrgq9M_kGJPX5kGaSPIiOJUicRIt1K_jd7WDgmOng7vf3S2zN2uyUJNpgb2wgQI7D2iwRcsQ4jFMNuMOWmTtFLgaTt6pKMk2wBr_EWGn3DfCkpwWQFE4GXEBhWeSCGSliepXm3e7zha3_j6mzVdX2bZGlnqfhmeXxqG_pkd6dTGUeXEoyqrKc1FU86gPzVlFGg</recordid><startdate>20190425</startdate><enddate>20190425</enddate><creator>KANEGAE, Arinobu</creator><scope>EVB</scope></search><sort><creationdate>20190425</creationdate><title>THIN FILM TRANSISTOR ELEMENT SUBSTRATE, METHOD OF PRODUCING THE SUBSTRATE, AND ORGANIC EL DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ELEMENT SUBSTRATE</title><author>KANEGAE, Arinobu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019123300A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC HEATING</topic><topic>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KANEGAE, Arinobu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KANEGAE, Arinobu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM TRANSISTOR ELEMENT SUBSTRATE, METHOD OF PRODUCING THE SUBSTRATE, AND ORGANIC EL DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ELEMENT SUBSTRATE</title><date>2019-04-25</date><risdate>2019</risdate><abstract>The thin film transistor element substrate of the present disclosure includes a first moisture barrier layer covering the gate insulating layer and the gate electrode, covering the contact regions of the oxide semiconductor layer other than the connecting portion of the contact region connected to the source electrode and the connecting portion of the contact region connected to the drain electrode, and covering an surface of the substrate on which the oxide semiconductor layer is not disposed. The first moisture barrier layer includes a metal oxide and is formed by atomic layer deposition. The first moisture barrier layer formed by atomic layer deposition is in contact with a pair of contact regions.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title THIN FILM TRANSISTOR ELEMENT SUBSTRATE, METHOD OF PRODUCING THE SUBSTRATE, AND ORGANIC EL DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ELEMENT SUBSTRATE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T02%3A49%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KANEGAE,%20Arinobu&rft.date=2019-04-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019123300A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true