SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plat...

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Hauptverfasser: NAKANISHI, Yosuke, SUGAHARA, Kazuyuki, SUEHIRO, Yoshiyuki, YOKOYAMA, Yoshinori, SODA, Shinnosuke, HAYASHI, Komei, YOSHIDA, Motoru
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creator NAKANISHI, Yosuke
SUGAHARA, Kazuyuki
SUEHIRO, Yoshiyuki
YOKOYAMA, Yoshinori
SODA, Shinnosuke
HAYASHI, Komei
YOSHIDA, Motoru
description Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
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