AMORPHOUS THIN METAL FILM
An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at % to in 90 at % of a metalloid; 5 at % to 90 at % of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenu...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Johnson, T. Stafford Olsen, Kristopher Long, Greg Scott Pugliese, Roberto A Wager, John McGlone, John M Abbott, Jr., James Elmer Keszler, Douglas A Stickel, William F |
| description | An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at % to in 90 at % of a metalloid; 5 at % to 90 at % of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum. The three elements may account for at least 70 at % of the amorphous thin film stack. The stack can further include a second layer formed on a surface of the first layer. The second layer can be an oxide layer, a nitride layer, or a combination thereof. The second layer can have an average thickness of 10 angstroms to 200 microns and a thickness variance no greater than 15% of the average thickness of the second layer. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019119101A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019119101A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019119101A13</originalsourceid><addsrcrecordid>eNrjZJB09PUPCvDwDw1WCPHw9FPwdQ1x9FFw8_Tx5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGloZAZGDoaGhMnCoAj9Yg0g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>AMORPHOUS THIN METAL FILM</title><source>esp@cenet</source><creator>Johnson, T. Stafford ; Olsen, Kristopher ; Long, Greg Scott ; Pugliese, Roberto A ; Wager, John ; McGlone, John M ; Abbott, Jr., James Elmer ; Keszler, Douglas A ; Stickel, William F</creator><creatorcontrib>Johnson, T. Stafford ; Olsen, Kristopher ; Long, Greg Scott ; Pugliese, Roberto A ; Wager, John ; McGlone, John M ; Abbott, Jr., James Elmer ; Keszler, Douglas A ; Stickel, William F</creatorcontrib><description>An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at % to in 90 at % of a metalloid; 5 at % to 90 at % of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum. The three elements may account for at least 70 at % of the amorphous thin film stack. The stack can further include a second layer formed on a surface of the first layer. The second layer can be an oxide layer, a nitride layer, or a combination thereof. The second layer can have an average thickness of 10 angstroms to 200 microns and a thickness variance no greater than 15% of the average thickness of the second layer.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CORRECTION OF TYPOGRAPHICAL ERRORS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LINING MACHINES ; METALLURGY ; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PRINTING ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; SELECTIVE PRINTING MECHANISMS ; STAMPS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; TYPEWRITERS</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190425&DB=EPODOC&CC=US&NR=2019119101A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190425&DB=EPODOC&CC=US&NR=2019119101A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Johnson, T. Stafford</creatorcontrib><creatorcontrib>Olsen, Kristopher</creatorcontrib><creatorcontrib>Long, Greg Scott</creatorcontrib><creatorcontrib>Pugliese, Roberto A</creatorcontrib><creatorcontrib>Wager, John</creatorcontrib><creatorcontrib>McGlone, John M</creatorcontrib><creatorcontrib>Abbott, Jr., James Elmer</creatorcontrib><creatorcontrib>Keszler, Douglas A</creatorcontrib><creatorcontrib>Stickel, William F</creatorcontrib><title>AMORPHOUS THIN METAL FILM</title><description>An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at % to in 90 at % of a metalloid; 5 at % to 90 at % of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum. The three elements may account for at least 70 at % of the amorphous thin film stack. The stack can further include a second layer formed on a surface of the first layer. The second layer can be an oxide layer, a nitride layer, or a combination thereof. The second layer can have an average thickness of 10 angstroms to 200 microns and a thickness variance no greater than 15% of the average thickness of the second layer.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CORRECTION OF TYPOGRAPHICAL ERRORS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LINING MACHINES</subject><subject>METALLURGY</subject><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PRINTING</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>SELECTIVE PRINTING MECHANISMS</subject><subject>STAMPS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><subject>TYPEWRITERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJB09PUPCvDwDw1WCPHw9FPwdQ1x9FFw8_Tx5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGloZAZGDoaGhMnCoAj9Yg0g</recordid><startdate>20190425</startdate><enddate>20190425</enddate><creator>Johnson, T. Stafford</creator><creator>Olsen, Kristopher</creator><creator>Long, Greg Scott</creator><creator>Pugliese, Roberto A</creator><creator>Wager, John</creator><creator>McGlone, John M</creator><creator>Abbott, Jr., James Elmer</creator><creator>Keszler, Douglas A</creator><creator>Stickel, William F</creator><scope>EVB</scope></search><sort><creationdate>20190425</creationdate><title>AMORPHOUS THIN METAL FILM</title><author>Johnson, T. Stafford ; Olsen, Kristopher ; Long, Greg Scott ; Pugliese, Roberto A ; Wager, John ; McGlone, John M ; Abbott, Jr., James Elmer ; Keszler, Douglas A ; Stickel, William F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019119101A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CORRECTION OF TYPOGRAPHICAL ERRORS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LINING MACHINES</topic><topic>METALLURGY</topic><topic>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PRINTING</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>SELECTIVE PRINTING MECHANISMS</topic><topic>STAMPS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><topic>TYPEWRITERS</topic><toplevel>online_resources</toplevel><creatorcontrib>Johnson, T. Stafford</creatorcontrib><creatorcontrib>Olsen, Kristopher</creatorcontrib><creatorcontrib>Long, Greg Scott</creatorcontrib><creatorcontrib>Pugliese, Roberto A</creatorcontrib><creatorcontrib>Wager, John</creatorcontrib><creatorcontrib>McGlone, John M</creatorcontrib><creatorcontrib>Abbott, Jr., James Elmer</creatorcontrib><creatorcontrib>Keszler, Douglas A</creatorcontrib><creatorcontrib>Stickel, William F</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Johnson, T. Stafford</au><au>Olsen, Kristopher</au><au>Long, Greg Scott</au><au>Pugliese, Roberto A</au><au>Wager, John</au><au>McGlone, John M</au><au>Abbott, Jr., James Elmer</au><au>Keszler, Douglas A</au><au>Stickel, William F</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>AMORPHOUS THIN METAL FILM</title><date>2019-04-25</date><risdate>2019</risdate><abstract>An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at % to in 90 at % of a metalloid; 5 at % to 90 at % of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum. The three elements may account for at least 70 at % of the amorphous thin film stack. The stack can further include a second layer formed on a surface of the first layer. The second layer can be an oxide layer, a nitride layer, or a combination thereof. The second layer can have an average thickness of 10 angstroms to 200 microns and a thickness variance no greater than 15% of the average thickness of the second layer.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2019119101A1 |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CORRECTION OF TYPOGRAPHICAL ERRORS DIFFUSION TREATMENT OF METALLIC MATERIAL i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LINING MACHINES METALLURGY MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PRINTING PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SELECTIVE PRINTING MECHANISMS STAMPS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TYPEWRITERS |
| title | AMORPHOUS THIN METAL FILM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T16%3A07%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Johnson,%20T.%20Stafford&rft.date=2019-04-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019119101A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |