LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION

LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading la...

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Hauptverfasser: Perkins, James Michael, Bour, David P, Chakraborty, Arpan, Sizov, Dmitry S, McGroddy, Kelly, Haeger, Daniel Arthur, Drolet, Jean-Jacques P
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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container_issue
container_start_page
container_title
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creator Perkins, James Michael
Bour, David P
Chakraborty, Arpan
Sizov, Dmitry S
McGroddy, Kelly
Haeger, Daniel Arthur
Drolet, Jean-Jacques P
description LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019115495A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019115495A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019115495A13</originalsourceid><addsrcrecordid>eNrjZLD3cXVRCA4JCnUOCQ1yDVZw8w9SCHJ1CXUGCvv5--kGObp4OoZ4hrkqBHu6uIY7-vgApZ39fZ08_YDC_n48DKxpiTnFqbxQmptB2c01xNlDN7UgPz61uCAxOTUvtSQ-NNjIwNDS0NDUxNLU0dCYOFUARC0rkA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION</title><source>esp@cenet</source><creator>Perkins, James Michael ; Bour, David P ; Chakraborty, Arpan ; Sizov, Dmitry S ; McGroddy, Kelly ; Haeger, Daniel Arthur ; Drolet, Jean-Jacques P</creator><creatorcontrib>Perkins, James Michael ; Bour, David P ; Chakraborty, Arpan ; Sizov, Dmitry S ; McGroddy, Kelly ; Haeger, Daniel Arthur ; Drolet, Jean-Jacques P</creatorcontrib><description>LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190418&amp;DB=EPODOC&amp;CC=US&amp;NR=2019115495A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190418&amp;DB=EPODOC&amp;CC=US&amp;NR=2019115495A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Perkins, James Michael</creatorcontrib><creatorcontrib>Bour, David P</creatorcontrib><creatorcontrib>Chakraborty, Arpan</creatorcontrib><creatorcontrib>Sizov, Dmitry S</creatorcontrib><creatorcontrib>McGroddy, Kelly</creatorcontrib><creatorcontrib>Haeger, Daniel Arthur</creatorcontrib><creatorcontrib>Drolet, Jean-Jacques P</creatorcontrib><title>LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION</title><description>LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD3cXVRCA4JCnUOCQ1yDVZw8w9SCHJ1CXUGCvv5--kGObp4OoZ4hrkqBHu6uIY7-vgApZ39fZ08_YDC_n48DKxpiTnFqbxQmptB2c01xNlDN7UgPz61uCAxOTUvtSQ-NNjIwNDS0NDUxNLU0dCYOFUARC0rkA</recordid><startdate>20190418</startdate><enddate>20190418</enddate><creator>Perkins, James Michael</creator><creator>Bour, David P</creator><creator>Chakraborty, Arpan</creator><creator>Sizov, Dmitry S</creator><creator>McGroddy, Kelly</creator><creator>Haeger, Daniel Arthur</creator><creator>Drolet, Jean-Jacques P</creator><scope>EVB</scope></search><sort><creationdate>20190418</creationdate><title>LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION</title><author>Perkins, James Michael ; Bour, David P ; Chakraborty, Arpan ; Sizov, Dmitry S ; McGroddy, Kelly ; Haeger, Daniel Arthur ; Drolet, Jean-Jacques P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019115495A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Perkins, James Michael</creatorcontrib><creatorcontrib>Bour, David P</creatorcontrib><creatorcontrib>Chakraborty, Arpan</creatorcontrib><creatorcontrib>Sizov, Dmitry S</creatorcontrib><creatorcontrib>McGroddy, Kelly</creatorcontrib><creatorcontrib>Haeger, Daniel Arthur</creatorcontrib><creatorcontrib>Drolet, Jean-Jacques P</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Perkins, James Michael</au><au>Bour, David P</au><au>Chakraborty, Arpan</au><au>Sizov, Dmitry S</au><au>McGroddy, Kelly</au><au>Haeger, Daniel Arthur</au><au>Drolet, Jean-Jacques P</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION</title><date>2019-04-18</date><risdate>2019</risdate><abstract>LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-13T00%3A42%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Perkins,%20James%20Michael&rft.date=2019-04-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019115495A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true