GATE STACK FOR HETEROSTRUCTURE DEVICE

A heterostructure semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron gas layer is formed between the first and second active layers. A sandwich gate dielectric layer structure is disposed on the second active la...

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Bibliographische Detailangaben

1. Verfasser:	RAMDANI, JAMAL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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