ELECTROSTATIC DISCHARGE PROTECTION APPARATUSES

ELECTROSTATIC DISCHARGE PROTECTION APPARATUSES

Various embodiments are directed to electrostatic discharge (ESD) protection apparatus comprising a bipolar junction transistor (BJT) having terminals, a field-effect transistor (FET) having terminals, and a common base region connected to a recombination region. The BJT and the FET are integrated w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lai, Da-Wei, Claes, Jan, Swanenberg, Maarten Jacobus, Sque, Stephen John
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Various embodiments are directed to electrostatic discharge (ESD) protection apparatus comprising a bipolar junction transistor (BJT) having terminals, a field-effect transistor (FET) having terminals, and a common base region connected to a recombination region. The BJT and the FET are integrated with one another and include a common region that is shared by the BJT and the FET. The BJT and FET collectively bias the common base region and prevent triggering of the BJT by causing a potential of the common base region to follow a potential of one of the terminals of the BJT in response to an excessive but tolerable non-ESD voltage change at one or more of the terminals.