Semiconductor Devices Including Data Storage Patterns
A semiconductor device is provided including a base insulating layer on a substrate; a first conductive line that extends in a first direction on the base insulating layer; data storage structures on the first conductive line; selector structures on the data storage structures, each of the selector...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Kim, Joon Oh, Gyu Hwan Kim, Kyo Seop Sun, Chang Woo Hwang, Joon Youn |
description | A semiconductor device is provided including a base insulating layer on a substrate; a first conductive line that extends in a first direction on the base insulating layer; data storage structures on the first conductive line; selector structures on the data storage structures, each of the selector structures including a lower selector electrode, a selector, and an upper selector electrode; an insulating layer in a space between the selector structures; and a second conductive line disposed on the selector structures and the insulating layer and extended in a second direction intersecting the first direction. An upper surface of the insulating layer is higher than an upper surface of the upper selector electrode. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019109175A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019109175A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019109175A13</originalsourceid><addsrcrecordid>eNrjZDANTs3NTM7PSylNLskvUnBJLctMTi1W8MxLzilNycxLV3BJLElUCAbKJaanKgQklpSkFuUV8zCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwNDS0MDS0NzU0dDY-JUAQAa3i4V</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor Devices Including Data Storage Patterns</title><source>esp@cenet</source><creator>Kim, Joon ; Oh, Gyu Hwan ; Kim, Kyo Seop ; Sun, Chang Woo ; Hwang, Joon Youn</creator><creatorcontrib>Kim, Joon ; Oh, Gyu Hwan ; Kim, Kyo Seop ; Sun, Chang Woo ; Hwang, Joon Youn</creatorcontrib><description>A semiconductor device is provided including a base insulating layer on a substrate; a first conductive line that extends in a first direction on the base insulating layer; data storage structures on the first conductive line; selector structures on the data storage structures, each of the selector structures including a lower selector electrode, a selector, and an upper selector electrode; an insulating layer in a space between the selector structures; and a second conductive line disposed on the selector structures and the insulating layer and extended in a second direction intersecting the first direction. An upper surface of the insulating layer is higher than an upper surface of the upper selector electrode.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190411&DB=EPODOC&CC=US&NR=2019109175A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190411&DB=EPODOC&CC=US&NR=2019109175A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Joon</creatorcontrib><creatorcontrib>Oh, Gyu Hwan</creatorcontrib><creatorcontrib>Kim, Kyo Seop</creatorcontrib><creatorcontrib>Sun, Chang Woo</creatorcontrib><creatorcontrib>Hwang, Joon Youn</creatorcontrib><title>Semiconductor Devices Including Data Storage Patterns</title><description>A semiconductor device is provided including a base insulating layer on a substrate; a first conductive line that extends in a first direction on the base insulating layer; data storage structures on the first conductive line; selector structures on the data storage structures, each of the selector structures including a lower selector electrode, a selector, and an upper selector electrode; an insulating layer in a space between the selector structures; and a second conductive line disposed on the selector structures and the insulating layer and extended in a second direction intersecting the first direction. An upper surface of the insulating layer is higher than an upper surface of the upper selector electrode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANTs3NTM7PSylNLskvUnBJLctMTi1W8MxLzilNycxLV3BJLElUCAbKJaanKgQklpSkFuUV8zCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwNDS0MDS0NzU0dDY-JUAQAa3i4V</recordid><startdate>20190411</startdate><enddate>20190411</enddate><creator>Kim, Joon</creator><creator>Oh, Gyu Hwan</creator><creator>Kim, Kyo Seop</creator><creator>Sun, Chang Woo</creator><creator>Hwang, Joon Youn</creator><scope>EVB</scope></search><sort><creationdate>20190411</creationdate><title>Semiconductor Devices Including Data Storage Patterns</title><author>Kim, Joon ; Oh, Gyu Hwan ; Kim, Kyo Seop ; Sun, Chang Woo ; Hwang, Joon Youn</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019109175A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Joon</creatorcontrib><creatorcontrib>Oh, Gyu Hwan</creatorcontrib><creatorcontrib>Kim, Kyo Seop</creatorcontrib><creatorcontrib>Sun, Chang Woo</creatorcontrib><creatorcontrib>Hwang, Joon Youn</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Joon</au><au>Oh, Gyu Hwan</au><au>Kim, Kyo Seop</au><au>Sun, Chang Woo</au><au>Hwang, Joon Youn</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor Devices Including Data Storage Patterns</title><date>2019-04-11</date><risdate>2019</risdate><abstract>A semiconductor device is provided including a base insulating layer on a substrate; a first conductive line that extends in a first direction on the base insulating layer; data storage structures on the first conductive line; selector structures on the data storage structures, each of the selector structures including a lower selector electrode, a selector, and an upper selector electrode; an insulating layer in a space between the selector structures; and a second conductive line disposed on the selector structures and the insulating layer and extended in a second direction intersecting the first direction. An upper surface of the insulating layer is higher than an upper surface of the upper selector electrode.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2019109175A1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Semiconductor Devices Including Data Storage Patterns |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T04%3A58%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kim,%20Joon&rft.date=2019-04-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019109175A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |