MARGIN TEST FOR ONE-TIME PROGRAMMABLE MEMORY (OTPM) ARRAY WITH COMMON MODE CURRENT SOURCE

MARGIN TEST FOR ONE-TIME PROGRAMMABLE MEMORY (OTPM) ARRAY WITH COMMON MODE CURRENT SOURCE

The present disclosure relates to a structure which includes a current-mirror control node which is configured to adjust a current margin and provide the adjusted current margin to at least one one-time programmable memory (OTPM) cell.

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Bibliographische Detailangaben
1. Verfasser: FIFIELD, John A
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:The present disclosure relates to a structure which includes a current-mirror control node which is configured to adjust a current margin and provide the adjusted current margin to at least one one-time programmable memory (OTPM) cell.