RESISTIVE MEMORY DEVICE INCLUDING A REFERENCE CELL AND METHOD OF CONTROLLING A REFERENCE CELL

A method of controlling a reference cell in a resistive memory to identify values stored in a plurality of memory cells is provided. The method includes writing a first value to the plurality of memory cells, providing, to the reference cell, monotonically increasing or monotonically decreasing refe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: PYO, Suk-soo, HWANG, So-hee, JUNG, Hyun-taek, SONG, Tae-joong
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator PYO, Suk-soo
HWANG, So-hee
JUNG, Hyun-taek
SONG, Tae-joong
description A method of controlling a reference cell in a resistive memory to identify values stored in a plurality of memory cells is provided. The method includes writing a first value to the plurality of memory cells, providing, to the reference cell, monotonically increasing or monotonically decreasing reference currents. The method includes reading the plurality of memory cells as each of the reference currents is provided to the reference cell, and determining a read reference current based on an aggregation of results of the reading.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019088322A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019088322A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019088322A13</originalsourceid><addsrcrecordid>eNrjZIgNcg32DA7xDHNV8HX19Q-KVHBxDfN0dlXw9HP2CXXx9HNXcFQIcnVzDXL1A4o6u_r4KDj6uQAVh3j4uyj4uyk4-_uFBPn7-GBTysPAmpaYU5zKC6W5GZTdXEOcPXRTC_LjU4sLEpNT81JL4kODjQwMLQ0sLIyNjBwNjYlTBQCA4DMW</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>RESISTIVE MEMORY DEVICE INCLUDING A REFERENCE CELL AND METHOD OF CONTROLLING A REFERENCE CELL</title><source>esp@cenet</source><creator>PYO, Suk-soo ; HWANG, So-hee ; JUNG, Hyun-taek ; SONG, Tae-joong</creator><creatorcontrib>PYO, Suk-soo ; HWANG, So-hee ; JUNG, Hyun-taek ; SONG, Tae-joong</creatorcontrib><description>A method of controlling a reference cell in a resistive memory to identify values stored in a plurality of memory cells is provided. The method includes writing a first value to the plurality of memory cells, providing, to the reference cell, monotonically increasing or monotonically decreasing reference currents. The method includes reading the plurality of memory cells as each of the reference currents is provided to the reference cell, and determining a read reference current based on an aggregation of results of the reading.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190321&amp;DB=EPODOC&amp;CC=US&amp;NR=2019088322A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190321&amp;DB=EPODOC&amp;CC=US&amp;NR=2019088322A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PYO, Suk-soo</creatorcontrib><creatorcontrib>HWANG, So-hee</creatorcontrib><creatorcontrib>JUNG, Hyun-taek</creatorcontrib><creatorcontrib>SONG, Tae-joong</creatorcontrib><title>RESISTIVE MEMORY DEVICE INCLUDING A REFERENCE CELL AND METHOD OF CONTROLLING A REFERENCE CELL</title><description>A method of controlling a reference cell in a resistive memory to identify values stored in a plurality of memory cells is provided. The method includes writing a first value to the plurality of memory cells, providing, to the reference cell, monotonically increasing or monotonically decreasing reference currents. The method includes reading the plurality of memory cells as each of the reference currents is provided to the reference cell, and determining a read reference current based on an aggregation of results of the reading.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgNcg32DA7xDHNV8HX19Q-KVHBxDfN0dlXw9HP2CXXx9HNXcFQIcnVzDXL1A4o6u_r4KDj6uQAVh3j4uyj4uyk4-_uFBPn7-GBTysPAmpaYU5zKC6W5GZTdXEOcPXRTC_LjU4sLEpNT81JL4kODjQwMLQ0sLIyNjBwNjYlTBQCA4DMW</recordid><startdate>20190321</startdate><enddate>20190321</enddate><creator>PYO, Suk-soo</creator><creator>HWANG, So-hee</creator><creator>JUNG, Hyun-taek</creator><creator>SONG, Tae-joong</creator><scope>EVB</scope></search><sort><creationdate>20190321</creationdate><title>RESISTIVE MEMORY DEVICE INCLUDING A REFERENCE CELL AND METHOD OF CONTROLLING A REFERENCE CELL</title><author>PYO, Suk-soo ; HWANG, So-hee ; JUNG, Hyun-taek ; SONG, Tae-joong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019088322A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>PYO, Suk-soo</creatorcontrib><creatorcontrib>HWANG, So-hee</creatorcontrib><creatorcontrib>JUNG, Hyun-taek</creatorcontrib><creatorcontrib>SONG, Tae-joong</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PYO, Suk-soo</au><au>HWANG, So-hee</au><au>JUNG, Hyun-taek</au><au>SONG, Tae-joong</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESISTIVE MEMORY DEVICE INCLUDING A REFERENCE CELL AND METHOD OF CONTROLLING A REFERENCE CELL</title><date>2019-03-21</date><risdate>2019</risdate><abstract>A method of controlling a reference cell in a resistive memory to identify values stored in a plurality of memory cells is provided. The method includes writing a first value to the plurality of memory cells, providing, to the reference cell, monotonically increasing or monotonically decreasing reference currents. The method includes reading the plurality of memory cells as each of the reference currents is provided to the reference cell, and determining a read reference current based on an aggregation of results of the reading.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2019088322A1
source esp@cenet
subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title RESISTIVE MEMORY DEVICE INCLUDING A REFERENCE CELL AND METHOD OF CONTROLLING A REFERENCE CELL
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T20%3A33%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PYO,%20Suk-soo&rft.date=2019-03-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019088322A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true