Pattern Measuring Method and Pattern Measuring Apparatus

Pattern Measuring Method and Pattern Measuring Apparatus

A pattern measuring method and a pattern measuring apparatus that efficiently prevent a measurement error inherent to a device that performs beam scanning in a specific direction such as a scanning electron microscope are provided. The invention is directed to a pattern measuring method and a patter...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KAWASAKI, Takahiro, KAWADA, Hiroki, KAKUTA, Junichi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator KAWASAKI, Takahiro
KAWADA, Hiroki
KAKUTA, Junichi
description A pattern measuring method and a pattern measuring apparatus that efficiently prevent a measurement error inherent to a device that performs beam scanning in a specific direction such as a scanning electron microscope are provided. The invention is directed to a pattern measuring method and a pattern measuring apparatus in which a first curve with respect to an edge of one side and a second curve with respect to an edge of the other side are obtained by calculating a first power spectral density with respect to the edge of one side of a pattern and a second power spectral density with respect to the edge of the other side of the pattern based upon a signal that is obtained when a charged particle beam is scanned in a direction intersecting the edge of the pattern; a difference value between the first curve and the second curve is calculated; and one of the first curve and the second curve is corrected by using the difference value.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019066973A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019066973A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019066973A13</originalsourceid><addsrcrecordid>eNrjZLAISCwpSS3KU_BNTSwuLcrMSweySjLyUxQS81IUMCUdCwoSixJLSot5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgaGlgZmZpbmxo6ExcaoAuLEvQA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Pattern Measuring Method and Pattern Measuring Apparatus</title><source>esp@cenet</source><creator>KAWASAKI, Takahiro ; KAWADA, Hiroki ; KAKUTA, Junichi</creator><creatorcontrib>KAWASAKI, Takahiro ; KAWADA, Hiroki ; KAKUTA, Junichi</creatorcontrib><description>A pattern measuring method and a pattern measuring apparatus that efficiently prevent a measurement error inherent to a device that performs beam scanning in a specific direction such as a scanning electron microscope are provided. The invention is directed to a pattern measuring method and a pattern measuring apparatus in which a first curve with respect to an edge of one side and a second curve with respect to an edge of the other side are obtained by calculating a first power spectral density with respect to the edge of one side of a pattern and a second power spectral density with respect to the edge of the other side of the pattern based upon a signal that is obtained when a charged particle beam is scanned in a direction intersecting the edge of the pattern; a difference value between the first curve and the second curve is calculated; and one of the first curve and the second curve is corrected by using the difference value.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190228&amp;DB=EPODOC&amp;CC=US&amp;NR=2019066973A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190228&amp;DB=EPODOC&amp;CC=US&amp;NR=2019066973A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWASAKI, Takahiro</creatorcontrib><creatorcontrib>KAWADA, Hiroki</creatorcontrib><creatorcontrib>KAKUTA, Junichi</creatorcontrib><title>Pattern Measuring Method and Pattern Measuring Apparatus</title><description>A pattern measuring method and a pattern measuring apparatus that efficiently prevent a measurement error inherent to a device that performs beam scanning in a specific direction such as a scanning electron microscope are provided. The invention is directed to a pattern measuring method and a pattern measuring apparatus in which a first curve with respect to an edge of one side and a second curve with respect to an edge of the other side are obtained by calculating a first power spectral density with respect to the edge of one side of a pattern and a second power spectral density with respect to the edge of the other side of the pattern based upon a signal that is obtained when a charged particle beam is scanned in a direction intersecting the edge of the pattern; a difference value between the first curve and the second curve is calculated; and one of the first curve and the second curve is corrected by using the difference value.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAISCwpSS3KU_BNTSwuLcrMSweySjLyUxQS81IUMCUdCwoSixJLSot5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgaGlgZmZpbmxo6ExcaoAuLEvQA</recordid><startdate>20190228</startdate><enddate>20190228</enddate><creator>KAWASAKI, Takahiro</creator><creator>KAWADA, Hiroki</creator><creator>KAKUTA, Junichi</creator><scope>EVB</scope></search><sort><creationdate>20190228</creationdate><title>Pattern Measuring Method and Pattern Measuring Apparatus</title><author>KAWASAKI, Takahiro ; KAWADA, Hiroki ; KAKUTA, Junichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019066973A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAWASAKI, Takahiro</creatorcontrib><creatorcontrib>KAWADA, Hiroki</creatorcontrib><creatorcontrib>KAKUTA, Junichi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAWASAKI, Takahiro</au><au>KAWADA, Hiroki</au><au>KAKUTA, Junichi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Pattern Measuring Method and Pattern Measuring Apparatus</title><date>2019-02-28</date><risdate>2019</risdate><abstract>A pattern measuring method and a pattern measuring apparatus that efficiently prevent a measurement error inherent to a device that performs beam scanning in a specific direction such as a scanning electron microscope are provided. The invention is directed to a pattern measuring method and a pattern measuring apparatus in which a first curve with respect to an edge of one side and a second curve with respect to an edge of the other side are obtained by calculating a first power spectral density with respect to the edge of one side of a pattern and a second power spectral density with respect to the edge of the other side of the pattern based upon a signal that is obtained when a charged particle beam is scanned in a direction intersecting the edge of the pattern; a difference value between the first curve and the second curve is calculated; and one of the first curve and the second curve is corrected by using the difference value.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2019066973A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Pattern Measuring Method and Pattern Measuring Apparatus
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T23%3A19%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KAWASAKI,%20Takahiro&rft.date=2019-02-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2019066973A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true