SEMICONDUCTOR SWITCHING ELEMENT

SEMICONDUCTOR SWITCHING ELEMENT

A trench gate semiconductor switching element is provided. The semiconductor substrate of the element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench, and a first conductivity type second semiconductor region extending fro...

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Hauptverfasser: SAITO, Jun, AOI, Sachiko, URAKAMI, Yasushi
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SAITO, Jun
AOI, Sachiko
URAKAMI, Yasushi
description A trench gate semiconductor switching element is provided. The semiconductor substrate of the element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench, and a first conductivity type second semiconductor region extending from a position in contact with a lower surface of the body region to a position in contact with a lower surface of the bottom region. The bottom region includes a first bottom region in contact with the gate insulation layer in a first range of the bottom surface positioned at an end in a long direction of the trench and extending from the bottom surface to a first position; and a second bottom region in contact with the gate insulation layer in a second range adjacent to the first range and extending from the bottom surface to a second position lower than the first position.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR SWITCHING ELEMENT
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