GAS COMPOSITION FOR DRY ETCHING AND DRY ETCHING METHOD

A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z≤2x and y≤z are satisfied. Al...

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Hauptverfasser:	IKETANI, Yoshihiko, TAKAHASHI, Yoshinao, KATO, Korehito, FUKASAWA, Tetsuya
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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