Transistor Device with Trench Edge Termination

Disclosed are a transistor device and a method. The transistor device includes a semiconductor body with a first surface, an inner region, and an edge region, a drift region of a first doping type in the inner region and the edge region, a plurality of transistor cells in the inner region, and a ter...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Finney, Adrian, Bodea, Marius Aurel
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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